2. Define PIV of a Diode.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Subject: Electronics Engineering
Solve no 2
Transcribed Image Text:1. Zener and Avalanche breakdown
2. Define PIV of a Diode.
3. Determine the dc resistance of a diode at VD =-20V if its reverse
saturation current is 1uA (The VT=25 mv at room temperature)
4. Give at least two examples of semiconductor materials which are used
for LED.
5. Develop the basic Diode equation. Using the same find the percentage
increase in reverse saturation current of a PN junction diode if the
temperature is increased from 25°C to 50°C.
6. A diode is operated at room temperature with IS =10-¹0 A and n=2.
i)What is the diode current ID, if the voltage across the diode is
VD=0.65 V ? ii)What voltage VĎ is required for a diode current of 200
μΑ.
Determine 1₁, 12 and 13 for the circuit shown in the following figure.
Si
3.7K
www
13 Ge
||₁₁|
+2V
4.3K
www
T₂
7.
A silicon diode having 200 internal resistance is used as half wave rectifier. If the
applied input voltage is 50 sin100πt and load resistance is 800 Q2, then find
a) Im, Idc and Irms
b) Output frequency and ripple factor
c) AC input and output power
d) efficiency
8.
9. Differentiate zener and avalanche breakdown.
10.Draw and explain the V-I characteristics of silicon diode.
11.Design a voltage regulator using zener diode to meet the following
specification; Unregulated voltage=20V, Vo=10V, load current is 0-
20mA, 12min=10mA, 12max=100mA
12. What do you mean by break region of a diode?
What is Avalnche break down?
13.
Explain the operation of P-N junction diode with V-I characteristics.
14.
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