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A high quality double hetero-structure GaAs/n,Ga1 xAs/GaAs pn+ LED have equal radiative and nonradiative minority carrier lifetime, the LED drive current is 97 mA at a bias voltage of 3 V, if the mole fraction value of the active region is x-0.175, the power efficiency of the device will be? O a. 82.30 % Ob.43.50 % O c. 31.74 % O d. 19.59 %

A high quality double hetero-structure GaAs/n,Ga1 xAs/GaAs pn+ LED have equal radiative and nonradiative minority carrier lifetime, the LED drive current is 97 mA at a bias voltage of 3 V, if the mole fraction value of the active region is x-0.175, the power efficiency of the device will be? O a. 82.30 % Ob.43.50 % O c. 31.74 % O d. 19.59 %

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: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Si Ge Ga As -31 9.11 х 10° Kg Eg (eV) пi (ст Hn (cm²/V – s) Mp (cm²/V – s) Ne (cm-3) Ny (cm-3) m/m. m;/m. Er (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 19 1.602 x 10 8.85 x 10 1.05 x 10-34 J - s C 1500 3900 8500 12 €o F/m 450 1900 400 1.04 x 1019 6 x 1018 4.45 x 1017 7.72 x 1018 2.78 x 1019 8.6 x 10-5 eV/K 26 mV (T K 9.84 x 1018 KT/q = 300 K) 0.082 0.98 0.067 26 meV (T 3 x 10 m/s KT 300 K) 0.28 0.49 0.45 C 11.7 16 13.1 nair = 1 NGaAs = 3.66 Some useful relations EgAlGa1- As (r) = 1.424 + 1.247x (eV) Egin. Ga1-As (x) = 1.425 – 1.501r +0.436x2 (eV) 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Si Ge Ga As -31 9.11 х 10° Kg Eg (eV) пi (ст Hn (cm²/V – s) Mp (cm²/V – s) Ne (cm-3) Ny (cm-3) m/m. m;/m. Er (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 19 1.602 x 10 8.85 x 10 1.05 x 10-34 J - s C 1500 3900 8500 12 €o F/m 450 1900 400 1.04 x 1019 6 x 1018 4.45 x 1017 7.72 x 1018 2.78 x 1019 8.6 x 10-5 eV/K 26 mV (T K 9.84 x 1018 KT/q = 300 K) 0.082 0.98 0.067 26 meV (T 3 x 10 m/s KT 300 K) 0.28 0.49 0.45 C 11.7 16 13.1 nair = 1 NGaAs = 3.66 Some useful relations EgAlGa1- As (r) = 1.424 + 1.247x (eV) Egin. Ga1-As (x) = 1.425 – 1.501r +0.436x2 (eV) 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
O d. 10.47 % A high quality double hetero-structure GAAS/In,Ga1 xAs/GaAs pn+ LED have equal radiative and nonradiative minority carrier lifetime, the LED drive current is 97 mA at a bias voltage of 3 V, if the mole fraction value of the active region is x-0.175, the power efficiency of the f device will be? ion O a. 82.30 % O b.43.50 % O c. 31.74 % O d. 19.59 % In solar cells the maximum possible current that can be achieved is simply the short-circuit current.
Transcribed Image Text:O d. 10.47 % A high quality double hetero-structure GAAS/In,Ga1 xAs/GaAs pn+ LED have equal radiative and nonradiative minority carrier lifetime, the LED drive current is 97 mA at a bias voltage of 3 V, if the mole fraction value of the active region is x-0.175, the power efficiency of the f device will be? ion O a. 82.30 % O b.43.50 % O c. 31.74 % O d. 19.59 % In solar cells the maximum possible current that can be achieved is simply the short-circuit current.
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