some help please 4.36 The parameters of the circuit in Figure P4.36 are Rs = 4k, R₁ = 850k,R₂ = 350k, and R₁ = 4 ks2. The transistor parameters are VT p = -1.2 V,k₁ = 40 μA/V², W/L = 80, and = 0.05 V-1. (a) Determine IDQ andVsDQ. (b) Find the small-signal voltage gain A, vo/vi. (c) Determine thesmall-signal circuit transconductance gain Agio/v. (d) Find the small-signal output resistance R.. VDD-10 VCaR₁RsСеFigure P4.36R₂RL

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Answered: 4.36 The parameters of the circuit in…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Find the Q-point current for the transistor in if all resistors are reduced by a factor of 2. Assume saturation region operation. What value of R is needed to set VDS = −5 V. Assumethat γ = 0 and W/L = 40/1
4.36 The parameters of the circuit in Figure P4.36 are Rs = 4 k2, R1 = 850 k2, R2 = 350 k2, and RL = 4 k2. The transistor parameters are VTp =-1.2 V, k, = 40 µA/V², W/L = 80, and A = 0.05 V-1. (a) Determine Ipg and VSDQ. (b) Find the small-signal voltage gain A, = vo/Vj. (c) Determine the small-signal circuit transconductance gain Ag = i,/vj. (d) Find the small- signal output resistance R,. %3D VDp = 10 V Rs R. R1 Cc2 RL R2
Identify the source, drain, gate, and bulk terminalsand find the current I in the transistorsAssume VTN = 0.70 V
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Calculate the current for the JFET for VGS = −2 V and VDS = 0.5 V.(b) Repeat for VGS = −1 V and VDS = 6 V
Can the regulator given in Figure Q4.b be used to regulate the output of a full-waverectifier, given the specifications for Io and Vpk in the Table 4 above? The rectifier voltage varies between 0.7Vpk and Vpk (that is, the ripple voltage is 30%of Vpk). The value of the Zener voltage Vz is 5.6 V, and the Zener diode power ratingis 2W. The regulator must supply to the load the current of at least Io mA. mA = 160 V = 22v To answer this question, you need to determine the value of the resistor R for theoutput requirements specification for Io and Vpk given in Table 4.
VDD VDD Cc2 o ve RG Figure P4.43 Figure P4.44 4.44 The transistor in the circuit in Figure P4.44 has parameters VTN = 0.4 V, K, = 0.5 mA/V², and 2 = 0. The circuit parameters are Vpp = 3 V and R; = 300 k2. (a) Design the circuit such that Ipo = 0.25 mA and VpsQ = 1.5 V. (b) Determine the small-signal voltage gain and the output resistance R,. ww ww ww ww
Q6) d) Show by means of a diagram how you will normally connect external batteries ini. PNP transistorii. NPN transistore) Describe how a semiconductor will behave at absolute zero temperature.
A MOSFET operated as a switch as shown in Figure 4.3 permits a digital signal operating at very low current levels to control comparatively high- level current devices such as a light-emitting diode (LED). Analysis a. VG IG VDD b. Repeat for VG = 3.3 V. RD ID ALED VD Figure 4.3: Circuit for Problem 4.3 ermine IG, VD, and ID wh VG = 0 V. The [OSFET is operating region?
4.15 For the NMOS common-source amplifier in Figure P4.15, the transistor parameters are: VIN = 0.8 V, K, =I mA/V², and à = 0. The circuit para- meters are VpD = 5 V, Rs = 1 k2, Rp = 4 k2, R = 225 k2. and R2 = 175 k2. (a) Calculate the quiescent values Ipo and Vpso. (b) Deter- mine the small-signal voltage gain for Ri = 00. (c) Determine the value of RL that will reduce the small-signal voltage gain to 75 percent of the value found in part (b). VpD Figure P4.15 ww ww

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