3) Let us have semiconductor and assume that band gap little higher than that bulk Si 1.2 eV and the electron effective mass 0.2 time that of free electron. a) Write down expression for occupied electron density at energy E and E + dE (just use the symbols of related quantities). b) Obtain Nc(T) relation in terms of effective mass, T and Planck constant h 000 Ere -4-202 Erergr (ev) bar (do not care about numbers like pi or 4 etc.) c) If Nv(T) = Nc(T), find the hole effective mass. DoS (states/ev cell)
3) Let us have semiconductor and assume that band gap little higher than that bulk Si 1.2 eV and the electron effective mass 0.2 time that of free electron. a) Write down expression for occupied electron density at energy E and E + dE (just use the symbols of related quantities). b) Obtain Nc(T) relation in terms of effective mass, T and Planck constant h 000 Ere -4-202 Erergr (ev) bar (do not care about numbers like pi or 4 etc.) c) If Nv(T) = Nc(T), find the hole effective mass. DoS (states/ev cell)
Related questions
Question
Transcribed Image Text:can
3) Let us have semiconductor and assume that band gap little higher than that
bulk Si 1.2 eV and the electron effective mass 0.2 time that of free electron.
Ererg ()
a) Write down expression for occupied electron density at energy
E and E + dE (just use the symbols of related quantities).
b) Obtain Nc(T) relation in terms of effective mass, T and Planck constant h
bar (do not care about numbers like pi or 4 etc.)
c) If Nv(T) = Nc(T), find the hole effective mass.
18-16-14-12-10-8 -6 -4-2 O2
Energy (ev)
DOS (states/ev cell)
Expert Solution
This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
Step by step
Solved in 3 steps
