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10. In GaAs at T = 200 K, we found n = n = 5p and N 0 a Silicon Gallium arsenide Germanium = 0. Calculate no Po and N d' Table 4.1 | Effective density of states function and density of states effective mass values Nc (cm³) N₁ (cm-³) m/mo 2.8 X 10¹⁹ 1.04 × 101⁹ 1.08 4.7 X 10¹7 7.0 X 10¹8 0.067 1.04 × 101⁹ 6.0 × 1018 0.55 me/mo 0.56 0.48 0.37

10. In GaAs at T = 200 K, we found n = n = 5p and N 0 a Silicon Gallium arsenide Germanium = 0. Calculate no Po and N d' Table 4.1 | Effective density of states function and density of states effective mass values Nc (cm³) N₁ (cm-³) m/mo 2.8 X 10¹⁹ 1.04 × 101⁹ 1.08 4.7 X 10¹7 7.0 X 10¹8 0.067 1.04 × 101⁹ 6.0 × 1018 0.55 me/mo 0.56 0.48 0.37

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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10. In GaAs at T = 200 K, we found n = 5p and N = 0. Calculate no, p and N N. a Table 4.1 Effective density of states function and density of states effective mass values N₁ (cm-³) N₁ (cm-³) ma/mo 2.8 X 101⁹ 1.04 × 10¹⁹ 1.08 4.7 x 1017 7.0 X 1018 0.067 1.04 × 10¹⁹ 6.0 × 1018 0.55 Silicon Gallium arsenide Germanium m/mo 0.56 0.48 0.37
Transcribed Image Text:10. In GaAs at T = 200 K, we found n = 5p and N = 0. Calculate no, p and N N. a Table 4.1 Effective density of states function and density of states effective mass values N₁ (cm-³) N₁ (cm-³) ma/mo 2.8 X 101⁹ 1.04 × 10¹⁹ 1.08 4.7 x 1017 7.0 X 1018 0.067 1.04 × 10¹⁹ 6.0 × 1018 0.55 Silicon Gallium arsenide Germanium m/mo 0.56 0.48 0.37
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