The Fermi level of an n-type Si is 0.15 eV below the conduction band edge. What is the approximate electron concentration (cm-)? (Assume the band gap energy of Si is 1.1 eV at 300 K. nj = 1.5x1010 cm-3. Kg=1.38x10-23 J/K) (Please round up the answer to 3 decimal places.) Please choose one: a) 04.541 x 1016 b) 02.564 x 1017 c) 07.644 x 1016 d) 03.584 x 1017

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The Fermi level of an n-type Si is 0.15 eV below the conduction band edge. What is the approximate electron concentration
(cm-)? (Assume the band gap energy of Si is 1.1 eV at 300 K. nj = 1.5x1010 cm-3. Kg=1.38x10-23 J/K) (Please round up the
answer to 3 decimal places.)
Please choose one:
a) 04.541 x 1016
b) 02.564 x 1017
c) 07.644 x 1016
d) 03.584 x 1017
Transcribed Image Text:The Fermi level of an n-type Si is 0.15 eV below the conduction band edge. What is the approximate electron concentration (cm-)? (Assume the band gap energy of Si is 1.1 eV at 300 K. nj = 1.5x1010 cm-3. Kg=1.38x10-23 J/K) (Please round up the answer to 3 decimal places.) Please choose one: a) 04.541 x 1016 b) 02.564 x 1017 c) 07.644 x 1016 d) 03.584 x 1017
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