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A uniform n-type silicon bar has length 2 μm and cross-sectional area 0.25 x 10-¹2 m. A potential of 1 V is applied across it. Suppose ND 10¹6/cm³ and un = 1350 cm²/V. a) Find the electron drift velocity. b) Time it takes an electron to cross the 2 μm length. c) Calculate the drift-current density, and drift current in the silicon bar.

A uniform n-type silicon bar has length 2 μm and cross-sectional area 0.25 x 10-¹2 m. A potential of 1 V is applied across it. Suppose ND 10¹6/cm³ and un = 1350 cm²/V. a) Find the electron drift velocity. b) Time it takes an electron to cross the 2 μm length. c) Calculate the drift-current density, and drift current in the silicon bar.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Part A,B and C

A uniform n-type silicon bar has length 2 μm and cross-sectional area 0.25 x 10-¹2 m. A potential of 1 V is applied across it. Suppose ND 10¹6/cm³ and un = 1350 cm²/V. a) Find the electron drift velocity. b) Time it takes an electron to cross the 2 μm length. c) Calculate the drift-current density, and drift current in the silicon bar.
Transcribed Image Text:A uniform n-type silicon bar has length 2 μm and cross-sectional area 0.25 x 10-¹2 m. A potential of 1 V is applied across it. Suppose ND 10¹6/cm³ and un = 1350 cm²/V. a) Find the electron drift velocity. b) Time it takes an electron to cross the 2 μm length. c) Calculate the drift-current density, and drift current in the silicon bar.
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