1. A p-type silicon sample with the geometry shown in Figure 5 has parameters L= 0.2 cm, W= 102 cm, and d 8104 cm. The semiconductor parameters are p = 1016 cm3 and u,= 320 cm2/V-s. For Vx = 10 V and Bz 500 gauss=5 x 102 tesla, determine I, and VH .2. The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron mobility of u = 1300cm?/V-s and a hole mobility of u, = 450 cm2/V-s. (a) Calculate the resistivity of the material. (b) What is the conductivityof the material?3. Germanium is doped with 5 x1015 donor atoms per cm3 at T = 300 K. The dimensions of the Hall device are d 5 x 10-3cm, W= 2 x 102 cm, and L= 10- cm. The current is I, =250 µA, the applied voltage is Vx= 100 mV, and the magneticfluxdensity is Bz= 500 gauss= 5 x102 tesla. Calculate: (a) the Hall voltage, (b) the Hall field, and (c) the carrier mobility

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Answered: 1. Ap-type silicon sample with the…

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1. Ap-type silicon sample with the geometry shown in Figure 5 has parameters L= 0.2 cm, W= 102 cm, and d = 8 104 cm. The semiconductor parameters are p = 1016 cm3 and u,= 320 cm2/V-s. For Vx = 10 V and Bz 500 gauss= 5 x 102 tesla, determine I, and Vu.