1. A silicon sample is doped by a group-V material of 2×10¹7 cm³³. (a) Determine the electron and hole concentrations in this sample, assume T= 300 K and ni = 10¹⁰ cm³. What is the carrier transport mechanism in the sample if an external voltage is applied? (b) If a voltage of 20 V is applied to the silicon sample (across 200 µm), determine the total current flows in the sample (mA). Assume un= 1200 cm²/V-s and µp= 400 cm²/V-s. (c) If the sample is connected to another silicon sample with the same geometry but doped by a group-III material to form a PN junction. Determine the doping concentration to obtain a built-in potential of 0.83 V at the interface (V₁= 26 mV). (d) The silicon sample resembles the channel of MOSFET, and the size is modified accordingly as shown below for the 40 nm technology. Determine the inversion layer thickness h (nm) to obtain an equivalent channel resistance of 100 ohm (across 40 nm). Assume the carrier density is the same with (a), but only need to consider the electrons. (a)-(c) 20 μm, 20 μm Uniformly doped Si 200 μm (d) 10 μm 40 nm th

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
icon
Concept explainers
Question
1. A silicon sample is doped by a group-V material of 2×10¹7 cm²³.
(a) Determine the electron and hole concentrations in this sample, assume T= 300 K
and n₁ = 10¹0 cm³. What is the carrier transport mechanism in the sample if an
external voltage is applied?
(b) If a voltage of 20 V is applied to the silicon sample (across 200 µm), determine
the total current flows in the sample (mA). Assume un 1200 cm²/V-s and μp 400
cm²/V.s.
(c) If the sample is connected to another silicon sample with the same geometry but
doped by a group-III material to form a PN junction. Determine the doping
concentration to obtain a built-in potential of 0.83 V at the interface (V₁= 26 mV).
(d) The silicon sample resembles the channel of MOSFET, and the size is modified
accordingly as shown below for the 40 nm technology. Determine the inversion layer
thickness h (nm) to obtain an equivalent channel resistance of 100 ohm (across 40
nm). Assume the carrier density is the same with (a), but only need to consider the
electrons.
(a)-(c)
20 μm,
20 μm
Uniformly doped Si
200 μm
(d)
10 μm,
40 nm
1th
Transcribed Image Text:1. A silicon sample is doped by a group-V material of 2×10¹7 cm²³. (a) Determine the electron and hole concentrations in this sample, assume T= 300 K and n₁ = 10¹0 cm³. What is the carrier transport mechanism in the sample if an external voltage is applied? (b) If a voltage of 20 V is applied to the silicon sample (across 200 µm), determine the total current flows in the sample (mA). Assume un 1200 cm²/V-s and μp 400 cm²/V.s. (c) If the sample is connected to another silicon sample with the same geometry but doped by a group-III material to form a PN junction. Determine the doping concentration to obtain a built-in potential of 0.83 V at the interface (V₁= 26 mV). (d) The silicon sample resembles the channel of MOSFET, and the size is modified accordingly as shown below for the 40 nm technology. Determine the inversion layer thickness h (nm) to obtain an equivalent channel resistance of 100 ohm (across 40 nm). Assume the carrier density is the same with (a), but only need to consider the electrons. (a)-(c) 20 μm, 20 μm Uniformly doped Si 200 μm (d) 10 μm, 40 nm 1th
Expert Solution
steps

Step by step

Solved in 6 steps with 2 images

Blurred answer
Knowledge Booster
Working and Construction of Diode
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,