. Given that the photon flux detected by a Si photodetector with quantum efficiency of 50% is 50000 photons/pixel/s, while the dark and read noise level of this detector are as follows: Dark current (D): 500 e-/pixel/s Read noise (Nr): 10 e-rms/pixel Using the detector integration time, t, of 10 seconds: Find the photon noise. (i) (ii) Calculate the Signal to noise ratio (in dB) of this system. (iii) Determine if this is a photon noise limited or dark noise limited system. Act

. Given that the photon flux detected by a Si photodetector with quantum efficiency of 50% is 50000 photons/pixel/s, while the dark and read noise level of this detector are as follows: Dark current (D): 500 e-/pixel/s Read noise (Nr): 10 e-rms/pixel Using the detector integration time, t, of 10 seconds: Find the photon noise. (i) (ii) Calculate the Signal to noise ratio (in dB) of this system. (iii) Determine if this is a photon noise limited or dark noise limited system. Act

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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GaAs is utilized to manufacture infrared light-emitting diodes (LEDs). The band gap is 1.42 eV, and the effective masses of electrons and holes are 0.067 and 0.45 of the free-electron mass, respectively.a. Calculate the intrinsic electron and hole concentration of pure GaAs at room temperature.
2. Plot the transfer function, and clearly indicate the on/off conditions of each diode, the slope of the line, and the voltages of turning points in each operating region for the following circuits. Assuming the constant-voltage model (VD,on = 0.8 V) is used to determine the DC level. Also, Plot the output waveform in time-domain if the input signal is as shown below with the amplitude and other important values labeled in the figure. (a) (b) Vin R= 500 D₁ V₁= 2.5 V D₂ A V₂ 1.6 V D₁ 2R 2X4 2R D₂ 3R out Vout Vin Vin 10 mv 1-AAAA-3.4 V >t 5 V
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There is a p-type semiconductor box. As the voltage at both ends of the box continued to increase, the drift velocity of the holes in the box reached the saturation velocity. After that, if the acceptor doping concentration in this semiconductor box is doubled and the voltage is also doubled, how will the current change in this semiconductor box change? However, it is assumed that the mobility is affected only by impurity scattering. .
Calculate the maximum velocity of the beam of elec- trons in a CRT having a cathode anode voltage of 1000V. Assume that the electrons to leave the cathode with zero velocity. Charge of electron = -1.6 × 10-¹⁹ C and mass of electron = 9.1 x 10-31 kg
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6. For a particular dual-slope ADC: Vref = +5.0V and the charge time is 6ms. %3D a) " Draw a time-domain plot for the dual-slope ADC. b) When Vin = -2.5V, what is the total conversion time? c) When Vin increases by 1.0V, what is the total conversion time?
5) An LED light is powered by a 20V DC (low:0V to high:20V) square wave source in frequency of 1.2KHZ. Find the power delivered (average) to the LED light when the square wave is in 30%, 50%, and 80% duty-cycle respectively.
2 V 1ΚΩ VOUT Find the following: a. Vout b. Small signal model of the diode under these conditions (Do NOT consider capacitance across the diode junction and the resistance of the semiconductor material outside the diode junction) c. Approx. peak-to-peak value of the AC component of Vout if a 1 mV RMS sinusoidal signal is added to the 2 V DC source. Given that: reverse saturation current is 1.5 x 10-14 A, ideality factor is 1.1, and the circuit is operating at 27°C.
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