Optoelectronic A simple Ge n-i-n photo-detector sample has a length of L30 pm and a hole lifetime of,09 ävoltage of 2 Vs applied across the detector length, at 300 K the detector gain at the applied voltage will beO a. 1160O b. 2376c. 0Od. 1530e.0.7992

According to the question we have to find the value of Gain.

A simple Ge n-i-n photo-detector sample has a length ofL=30 pm and a hole lifetime of 49p. Ifa voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be:

A simple Ge n-i-n photo-detector sample has a length ofL=30 pm and a hole lifetime of 49p. Ifa voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be:

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Optoelectronic

A simple Ge n-i-n photo-detector sample has a length of L30 pm and a hole lifetime of,09 ä
voltage of 2 Vs applied across the detector length, at 300 K the detector gain at the applied voltage will be
O a. 1160
O b. 2376
c. 0
Od. 1530
e.0.7992

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