ECE_331-Post_lab_3 (1)

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University of Waterloo *

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331

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Chemistry

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Dec 6, 2023

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ECE 331-Post Lab 3 (15 points) By: Angelina Lam 1. a. What process technique did we use to form a gate oxide layer on the sample? We used a process called thermal oxidation where we keep the sample at 1050 decrees celsius for 1 hour and 20 minutes with O 2 circulating to grow the oxide, we then ramp up and cool down with N 2 gas in the chamber. b. What was the thickness of gate oxide? The thickness of the gate oxide is ~90 nm c) why did we chose this thickness for the gate oxide? (4 points) The thickness of the gate oxide is determined by the the electrical properties we want such as on and off current etc. 2. Why is a precise alignment important when we align mask 2 (gate dielectric) to Mask 1 (source and drain doped area)? (4 points) It is important to align the mask to ensure we are able to form a working g ate dialectic for the mosfet. Even if we are off with the alignment by 2micro meters we can create a short between the source and drain causing the whole device to fail and thus we would have to start over again. 3. a. What solution did we use for gate oxide etching? We use a water buffered HF solution b. Describe what are the components of the etchant solution 10% HF solution is a very strong acid that can etch too much of the gate oxide. To combat this problem we use a buffer of H2O to make it weaker and easier to control how much and how quickly the solution etches the oxide. c) how does each component contribute to the etching? (4 points) Once again the Hf is a very strong acid to remove the unwanted/excess gate oxides on selected areas. The H 2 O is there to help buffer the solution in order to help control the etching speed and stability. 4. What inspection methods did we use to ensure that the oxide layer is fully removed from the desired area of the wafer? (2 points) We used 3 different methods: 1. visually being that the colour was different as once we remove the oxide layer we can see the bare Si underneath once more being a greyish color. 2. use a multimeter to check that the oxide layer is gone being we have a low resistance. 3. S pray water onto the wafer, the areas that don’t have any oxide layers will be hydrophobic and the water will just bead off. 5. What was the main purpose of the process steps that we did in Lab 3? (1 points) The main purpose of the process steps in the lab was to grow the SIO for the gate, connecting the drain and source, within the doped parts from lab 2
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