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Electric Circuits. (11th Edition)
11th Edition
ISBN: 9780134746968
Author: James W. Nilsson, Susan Riedel
Publisher: PEARSON
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Question
Chapter 9, Problem 20P
a.
To determine
Show impedances between terminals a and b is same in Figure P9.20 (a) and (b).
b.
To determine
Calculate the values of resistance and capacitance.
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Chapter 9 Solutions
Electric Circuits. (11th Edition)
Ch. 9.3 - Prob. 1APCh. 9.3 - Prob. 2APCh. 9.4 - Prob. 3APCh. 9.4 - Prob. 4APCh. 9.5 - Four branches terminate at a common node. The...Ch. 9.6 - A 20 resistor is connected in parallel with a 5...Ch. 9.6 - The interconnection described in Assessment...Ch. 9.6 - Prob. 9APCh. 9.7 - Find the steady-state expression for vo (t) in the...Ch. 9.7 - Find the Thévenin equivalent with respect to...
Ch. 9.8 - Use the node-voltage method to find the...Ch. 9.9 - Use the mesh-current method to find the phasor...Ch. 9.10 - Prob. 14APCh. 9.11 - The source voltage in the phasor domain circuit in...Ch. 9 - Prob. 1PCh. 9 - A sinusoidal voltage is given by the...Ch. 9 - Prob. 3PCh. 9 - Prob. 4PCh. 9 - Prob. 5PCh. 9 - Prob. 6PCh. 9 - Prob. 7PCh. 9 - Find the rms value of the half-wave rectified...Ch. 9 - Verify that Eq. 9.7 is the solution of Eq. 9.6....Ch. 9 - Prob. 10PCh. 9 - Use the concept of the phasor to combine the...Ch. 9 - The expressions for the steady-state voltage and...Ch. 9 - Prob. 13PCh. 9 - A 50 kHz sinusoidal voltage has zero phase angle...Ch. 9 - Prob. 15PCh. 9 - A 10 Ω resistor and a 5 μF capacitor are connected...Ch. 9 - Three branches having impedances of , and ,...Ch. 9 - Prob. 18PCh. 9 - Prob. 19PCh. 9 - Show that at a given frequency ω, the circuits in...Ch. 9 - Show that at a given frequency ω, the circuits in...Ch. 9 - Prob. 22PCh. 9 - Prob. 23PCh. 9 - Prob. 24PCh. 9 - Find the admittance Yab in the circuit seen in...Ch. 9 - Find the impedance Zab in the circuit seen in Fig....Ch. 9 - For 1he circuit shown in Fig. P9.27 find the...Ch. 9 - Prob. 28PCh. 9 - Prob. 29PCh. 9 - The circuit in Fig. P9.30 is operating in the...Ch. 9 - Find the steady-state expression for vo in the...Ch. 9 - Prob. 33PCh. 9 - Find the value of Z in the circuit seen in Fig....Ch. 9 - Find Ib and Z in the circuit shown in Fig. P9.35...Ch. 9 - The circuit shown in Fig. P9.36 is operating in...Ch. 9 - The frequency of the sinusoidal voltage source in...Ch. 9 - The frequency of the sinusoidal voltage source in...Ch. 9 - The frequency of the source voltage in the circuit...Ch. 9 - The circuit shown in Fig. P9.40 is operating in...Ch. 9 - The source voltage in the circuit in Fig. P9.41 is...Ch. 9 - Find Zab for the circuit shown in Fig P9.42.
Ch. 9 - Use source transformations to find the Thévenin...Ch. 9 - Use source transformations to find the Norton...Ch. 9 - The sinusoidal voltage source in the circuit in...Ch. 9 - Find the Norton equivalent circuit with respect to...Ch. 9 - Prob. 47PCh. 9 - Find the Norton equivalent with respect to...Ch. 9 - Find the Norton equivalent circuit with respect to...Ch. 9 - Find the Thévenin equivalent circuit with respect...Ch. 9 - Prob. 51PCh. 9 - Find Zab in the circuit shown in Fig. P9.52 when...Ch. 9 - The circuit shown in Fig. P9.53 is operating at a...Ch. 9 - PSPICEMULTISIM Use the node-voltage method to find...Ch. 9 - Use the node-voltage method to find V0 in the...Ch. 9 - PSPICEMULTISIM Use the node-voltage method to find...Ch. 9 - Use the node-voltage method to find V0 and I0 in...Ch. 9 - Use the node-voltage method to find the phasor...Ch. 9 - Use the mesh-current method to find the...Ch. 9 - Use the mesh-current method to find the...Ch. 9 - Use the mesh-current method to find the...Ch. 9 - Use the mesh-current method to find the...Ch. 9 - Use the mesh-current method to find the branch...Ch. 9 - Use the mesh-current method to find the...Ch. 9 - Prob. 65PCh. 9 - Prob. 66PCh. 9 - For the circuit in Fig. P9.67, suppose
What...Ch. 9 - For the circuit in Fig. P9.68, suppose
What...Ch. 9 - The op amp in the circuit in Fig. P9.69 is...Ch. 9 - Prob. 70PCh. 9 - Prob. 71PCh. 9 - Prob. 72PCh. 9 - Prob. 73PCh. 9 - Find the steady-state expressions for the currents...Ch. 9 - Prob. 75PCh. 9 - Prob. 76PCh. 9 - The sinusoidal voltage source in the circuit seen...Ch. 9 - Prob. 78PCh. 9 - Prob. 79PCh. 9 - Prob. 80PCh. 9 - Prob. 81PCh. 9 - Prob. 82PCh. 9 - Prob. 83PCh. 9 - Prob. 84PCh. 9 - Prob. 86PCh. 9 - Prob. 87PCh. 9 - Prob. 88PCh. 9 - Prob. 89PCh. 9 - Prob. 90PCh. 9 - Prob. 91P
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- What is the equivalent resistance of this circuit between terminals A and B ? m 1852 A 7_A 122 도 www 50 ти B ww 36 Ω 201 www www 30√arrow_forward3) A circuit is given as shown. (a) Find and label the circuit nodes. (6) Determine V2, V2, I₂, I₂ and Is © For each circuit element determine how much power it Supplies 15 absorbs. m 20 + 20 www 13 + 20 Z9V H 56 +1 LOV 1/2 1 4A + 3_22 3.2 ми + V₂ I 1arrow_forwardIn this experiment, we are going to use a 2N3904 BJT. Examine the data sheet for this device carefully. In particular, make a note of the current gain (identified by hFE). 1. Obtain the curve trace for a "Darlington Pair" of Bipolar Junction Transistors. A Darlington Pair consists of two transistors with the first BJT driving the base terminal of the second transistor as shown in Figure 1 below. A. Set up the primary sweep voltages for V1 the same as shown in the lecture notes (see the Darlington pair IV curve). B. Set up the secondary sweep currents for 11 to be an order of magnitude smaller than for the single BJT. In the Sweep Type box choose linear and enter the following 3 values: Start Value: 0, End Value: 8u and Increment: 1u (see lecture notes). C. Describe the primary differences you observe between the single BJT Curve Trace and that of the Darlington Pair. Discuss what might cause each difference. Q1 11 Q2 V1 Q2N3904 Figure 1. A Darlington Pair of 2N3904 transistors in a…arrow_forward
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- 1016 1015 Ge 101 Si 1013 1012 GaAs 10" (( uວ) uot¤ງແລ້ວuo ວາ.ຂ ວາsuuuT 0101 601 801 107 10% Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the following conditions. (n; =1010/cm³ at 300K) a) T 300 K, NA << ND, ND = 1015/cm³ b) T 300 K, NA = 9X1015/cm³, ND = 1016/cm³ c) T = 450 K, NA = 0, ND = 1014/cm³ d) T = 650 K, NA = 0, ND = 1014/cm³ 10° 200 300 400 500 600 700 T(K)arrow_forwardb) A semiconductor is doped with an impurity concentration N such that N >> n; and all the impurities are ionized. Also, n = N and p = n2/N. Is the impurity a donor or an acceptor? Explain.arrow_forwardd) For a silicon sample maintained at T=300K, the Fermi level is located 0.259 eV above the intrinsic Fermi level. What are the hole and electron concentrations?arrow_forward
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