Physics For Scientists And Engineers With Modern Physics, 9th Edition, The Ohio State University
9th Edition
ISBN: 9781305372337
Author: Raymond A. Serway | John W. Jewett
Publisher: Cengage Learning
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Question
Chapter 43, Problem 5OQ
To determine
The property of semiconductor that makes its conductivity increase with increasing temperature.
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In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid.
(a) At what temperature must the boron-doping process be operated? It is known
that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by
Where Do=0.019 cm2/s and Qo=2.74 x 105…
An n-type semiconductor material, which contains
the 1016 electrons/cm³ and the charge carrier
mobility is 1100 cm²/Vs.
(i) Determine
resistivity of the n-type semiconductor
material.
the conductivity and the
(ii) Determine the diffusion coefficient at room
temperature.
(iii) Evaluate the Einstein relation for the
majority charge carrier in n-type material.
In a bipolar junction transistor:
A) all the three regions (the emitter, the base and the collector) have equal concentrations of impurity
B) the emitter has the least concentration of impurity
C) the collector has the least concentration of impurity
D) the base has the least concentration of impurity
Chapter 43 Solutions
Physics For Scientists And Engineers With Modern Physics, 9th Edition, The Ohio State University
Ch. 43.1 - For each of the following atoms or molecules,...Ch. 43.2 - Prob. 43.2QQCh. 43.2 - Prob. 43.3QQCh. 43 - Prob. 1OQCh. 43 - Prob. 2OQCh. 43 - Prob. 3OQCh. 43 - Prob. 4OQCh. 43 - Prob. 5OQCh. 43 - Prob. 6OQCh. 43 - Prob. 7OQ
Ch. 43 - Prob. 1CQCh. 43 - Prob. 2CQCh. 43 - Prob. 3CQCh. 43 - Prob. 4CQCh. 43 - Prob. 5CQCh. 43 - Prob. 6CQCh. 43 - Prob. 7CQCh. 43 - Prob. 8CQCh. 43 - Discuss models for the different types of bonds...Ch. 43 - Prob. 10CQCh. 43 - Prob. 1PCh. 43 - Prob. 2PCh. 43 - Prob. 3PCh. 43 - Prob. 4PCh. 43 - Prob. 5PCh. 43 - Prob. 6PCh. 43 - Prob. 7PCh. 43 - Prob. 8PCh. 43 - Prob. 9PCh. 43 - Prob. 10PCh. 43 - Prob. 12PCh. 43 - Prob. 13PCh. 43 - Prob. 14PCh. 43 - Prob. 15PCh. 43 - Prob. 16PCh. 43 - The nuclei of the O2 molecule are separated by a...Ch. 43 - Prob. 18PCh. 43 - Prob. 19PCh. 43 - Prob. 20PCh. 43 - Prob. 21PCh. 43 - Prob. 22PCh. 43 - Prob. 23PCh. 43 - Prob. 24PCh. 43 - Prob. 25PCh. 43 - Prob. 27PCh. 43 - Prob. 28PCh. 43 - Prob. 29PCh. 43 - Prob. 30PCh. 43 - Prob. 31PCh. 43 - Prob. 32PCh. 43 - Prob. 33PCh. 43 - Prob. 34PCh. 43 - Prob. 35PCh. 43 - Prob. 36PCh. 43 - Prob. 37PCh. 43 - Prob. 38PCh. 43 - Prob. 39PCh. 43 - Prob. 40PCh. 43 - Prob. 41PCh. 43 - Prob. 42PCh. 43 - Prob. 43PCh. 43 - Prob. 44PCh. 43 - Prob. 45PCh. 43 - Prob. 46PCh. 43 - Prob. 47PCh. 43 - Prob. 49PCh. 43 - Prob. 50PCh. 43 - Prob. 51PCh. 43 - A direct and relatively simple demonstration of...Ch. 43 - Prob. 53PCh. 43 - Prob. 54APCh. 43 - Prob. 55APCh. 43 - Prob. 56APCh. 43 - Prob. 57APCh. 43 - Prob. 58APCh. 43 - Prob. 59APCh. 43 - Prob. 61APCh. 43 - Prob. 62APCh. 43 - Prob. 63CPCh. 43 - As an alternative to Equation 43.1, another useful...
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