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Chapter 22 Solutions
Introductory Circuit Analysis (13th Edition)
- For the circuit shown, let Is = 5, R₁-40, R2-30, R3-100, R4-80, R5-40, R6-30, R7- 10, and Rg= 100, and find: R₂ R6 ww www VX R3 R7 R8 RI R₁₂ Rs R5 www • The voltage Vx" (V) ⚫ The power absorbed by the output resistor Rg: Power= {Hint: you can use current divider (CD) or any other method.} (W) Tarrow_forwardFor the circuit shown, let V₁ = 26, R1-30, R₂-40, R3-50, R4-20, R5-100, R6-10, and find: RA R5 R3 V (+) R₁ R₂ R6 www • The voltage v (V) • The power delivered by the power source Vs: Power= {Hint: you can use voltage divider (VD) or any other method.} (W)arrow_forwardIn the circuit shown, let R₁-7, R₂-12, R3-24, R4-2, V₁ =17, V2 -68, and V3-51, to calculate the power delivered (or absorbed) by the circuit inside the box, as follows: {NOTE: On Multiple Choice Questions, like this problem, you have only one attempt } 1. The current I is equal to (choose the closed values in amperes) -0.791 0 -0.756 3.022 0.756 (A) -3.022 0.791 2. The power delivered (or absorbed) (choose the closest value in watts) (W) 373.345 0 -373.345 -52.234 52.234 65.079 O-24.833 R₁ V₂ R3 R₂ www V3 V₁ www R4arrow_forward
- Determine X(w) for the given function shown in Figure (1) by applying the differentiation property of the Fourier Transform. x(t) Figure (1) -2 -1 1 2arrow_forwardFor a enahnced-type NMOS transistor with V₁=+1V and kn'(w/L)= 2 mA/V2, find the minimum VDs required to operate in the saturation region when VGS=+2 V. What is the corresponding value of ID?arrow_forward. Using Properties to find the Z-Transform including the region of convergence for x(n) = n (2)" cos(0.2π(n − 2))u(n − 1) - -arrow_forward
- J VDD M₁ In the circuit of figure shown below, determine the region of operation of M₁as Vigoes from VDD.to zero. (You may want to draw a plot or just explain by the range, remember the transistor is a PMOS) Assume VDD = 2.5 V and | VTH | = 0.4V. 5 + 1 Varrow_forwardWe wish to design the circuit of the figure shown below for a drain current of 1 mA (l=1mA). If W/L = 18/0.18, compute R1 and R2 such that the input impedance is at least 20 k. R₁ VDD = 1.8 V 500 Ω M₁ R₂arrow_forwardIn the figure shown below, what is the minimum allowable value of VDD if M₁ must not enter the triode region? Assume λ=0 (use ideal current formula that is not dependent on VDs) 1 V + RD VDD = 1.8 V T M 500 Ω 1 W 10 L = 0.18arrow_forward
- Calculate the total charge stored in the channel of an NMOS device if Cox=10fF/um², w=10 µm, L=0.1 μm, and VGS-VTH=1 V. Assume VDs=0. (means there is no movement of electrons, all of them are piled up in the channel, we want to calculate the magnitude of electron charge |Q|)arrow_forwardThe first photo is question 1arrow_forwarda) Write down the order of the transfer function in each of the following cases. Assume that there are no terms in the numerator that will cancel terms in the denominator. 10 H(s) H(s) = s+1 5 (s+3)(s—. 4) 4s1 5 H(s) = H(s) - 83 +1 s27s 6 H(s) H(s) = s(s²+4s) 2s27s+1 84583882 +3s+2 H(s) 83 +8 s+1 = H(s) s34s26s+5 s52s4383 + 4s2 +5s +6arrow_forward
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