Physics for Scientists and Engineers
Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
bartleby

Concept explainers

bartleby

Videos

Question
Book Icon
Chapter 21, Problem 43P

(a)

To determine

The magnitude and direction of electric field at (1.0m,0) .

(a)

Expert Solution
Check Mark

Explanation of Solution

Given:

The magnitude of the first point charge is 5.0μC .

The position of the first point charge is (4.0m,2m) .

The magnitude of the second point charge is 12μC .

The position of the second point charge is (1.0m,0m) .

Formula used:

Write the expression for the resultant electric field at point P .

  EP=E1+E2 ..................(1)

Here, EP is the electric field at point P , E1 is the electric field due to the q1 charge and E2 is the electric field due to q2 charge.

Write the expression for the electric field due to charge q1 .

  E1=kq1r1,P2r^1,P ..................(2)

Here, k is constant, q1 is the first charge and r1,P is the distance between the point P and the first charge.

Write the expression for the electric field due to charge q2 .

  E2=kq2r2,P2r^2,P ..................(3)

Here, k is constant, q2 is the first charge and r2,P is the distance between the point P and the second charge.

Calculation:

Substitute 8.988×109Nm2/C2 for k , 5.0μC for q1 , 5.0m and 2m for r1,P in equation (1).

  E1=8.988× 109N m 2/ C 2( 5.0μC) ( 5.0m )2+ ( 2.0m )2[( 5.0m) i ^+( 2.0m) j ^ ( 5.0m ) 2 + ( 2.0m ) 2 ]E1=1.55×103N/C(0.928i^+0.371j^)E1=(1.44kN/C)i^(0.575kN/C)j^

Substitute 8.988×109Nm2/C2 for k , 12.0μC for q1 , 2.0m and 2.0m for r1,P in equation (2).

  E2=8.988× 109N m 2/ C 2( 12.0μC) ( 2.0m )2+ ( 2.0m )2[( 2.0m) i ^+( 2.0m) j ^ ( 5.0m ) 2 + ( 2.0m ) 2 ]E2=13.5×103N/C(0.707i^0.707j^)E2=(9.54kN/C)i^(9.54kN/C)j^

Substitute (1.44kN/C)i^(0.575kN/C)j^ for E1 and (9.54kN/C)i^(9.54kN/C)j^ for E2 in equation (1).

  EP=(1.44kN/C)i^(0.575kN/C)j^+(9.54kN/C)i^(9.54kN/C)j^EP=(8.10kN/C)i^(10.1kN/C)j^

The Magnitude of electric field is:

  EP= ( 8.10 kN/C )2 ( 10.1 kN/C )2EP=13kN/C

Direction of electric field is:

  θ=tan1( 8.10 kN/C 10.1 kN/C )θ=230°

Conclusion:

The magnitude and direction of electric field is 13kN/C and the direction is 230° .

(b)

To determine

The magnitude and direction of electric force.

(b)

Expert Solution
Check Mark

Explanation of Solution

Given:

The magnitude of the first point charge is 5.0μC .

The position of the first point charge is (4.0m,2m) .

The magnitude of the second point charge is 12μC .

The position of the second point charge is (1.0m,0m) .

Formula used:

Write the expression for the force.

  F=qE ..................(4)

Here, F is the force, q is the charge and E is the electric field.

Calculation:

Substitute (8.10kN/C)i^(10.1kN/C)j^ for E and 1.602×1019C for q in equation (4).

  F=1.602×1019C(( 8.10 kN/C )i^( 10.1 kN/C )j^)F=(1.30× 10 15N)i^+(1.62× 10 15N)j^

The magnitude of force is:

  F= ( 1.30× 10 15 N )2+ ( 1.62× 10 15 N )2F=2.1×1015N

The direction of electric force is:

  θ=tan1( 1.62× 10 15 N 1.30× 10 15 N)θ=53°

Conclusion:

The magnitude and direction of force is 2.1×1015N and 53° respectively.

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!
Students have asked these similar questions
How can you tell which vowel is being produced here ( “ee,” “ah,” or “oo”)? Also, how would you be able to tell for the other vowels?
You want to fabricate a soft microfluidic chip like the one below. How would you go about fabricating this chip knowing that you are targeting a channel with a square cross-sectional profile of 200 μm by 200 μm. What materials and steps would you use and why? Disregard the process to form the inlet and outlet. Square Cross Section
1. What are the key steps involved in the fabrication of a semiconductor device. 2. You are hired by a chip manufacturing company, and you are asked to prepare a silicon wafer with the pattern below. Describe the process you would use. High Aspect Ratio Trenches Undoped Si Wafer P-doped Si 3. You would like to deposit material within a high aspect ratio trench. What approach would you use and why? 4. A person is setting up a small clean room space to carry out an outreach activity to educate high school students about patterning using photolithography. They obtained a positive photoresist, a used spin coater, a high energy light lamp for exposure and ordered a plastic transparency mask with a pattern on it to reduce cost. Upon trying this set up multiple times they find that the full resist gets developed, and they are unable to transfer the pattern onto the resist. Help them troubleshoot and find out why pattern of transfer has not been successful. 5. You are given a composite…

Chapter 21 Solutions

Physics for Scientists and Engineers

Knowledge Booster
Background pattern image
Physics
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.
Similar questions
SEE MORE QUESTIONS
Recommended textbooks for you
Text book image
Principles of Physics: A Calculus-Based Text
Physics
ISBN:9781133104261
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Text book image
Physics for Scientists and Engineers: Foundations...
Physics
ISBN:9781133939146
Author:Katz, Debora M.
Publisher:Cengage Learning
Text book image
Physics for Scientists and Engineers, Technology ...
Physics
ISBN:9781305116399
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Text book image
College Physics
Physics
ISBN:9781285737027
Author:Raymond A. Serway, Chris Vuille
Publisher:Cengage Learning
Text book image
University Physics Volume 2
Physics
ISBN:9781938168161
Author:OpenStax
Publisher:OpenStax
Text book image
College Physics
Physics
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Cengage Learning
Electric Fields: Crash Course Physics #26; Author: CrashCourse;https://www.youtube.com/watch?v=mdulzEfQXDE;License: Standard YouTube License, CC-BY