Foundations of Materials Science and Engineering
6th Edition
ISBN: 9781259696558
Author: SMITH
Publisher: MCG
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Chapter 14.12, Problem 94SEP
Design a p-type semiconductor based on Si that allows a constant conductivity of 25 Ω−1 m−1 at room temperature.
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Student Name:
Student Id:
College of Applied Engineering
Al-Muzahmiyah Branch
Statics (AGE 1330) Section-1483
Quiz-2
Time: 20 minutes
Date: 16/02/2025
Q.1. A swinging door that weighs w=400.0N is supported by
hinges A and B so that the door can swing about a vertical'
axis passing through the hinges (as shown in below figure).
The door has a width of b=1.00m and the door slab has a
uniform mass density. The hinges are placed symmetrically
at the door's edge in such a way that the door's weight is
evenly distributed between them. The hinges are separated
by distance a=2.00m. Find the forces on the hinges when
the door rests half-open. Draw Free body diagram also.
[5 marks]
[CLO 1.2]
Mool
b
ర
a
2.0 m
B
1.0 m
For the walking-beam mechanism shown in Figure 3, find and plot the x and y coordinates of the
position of the coupler point P for one complete revolution of the crank O2A. Use the coordinate
system shown in Figure 3. Hint: Calculate them first with respect to the ground link 0204 and
then transform them into the global XY coordinate system.
y
-1.75
Ꮎ
Ꮎ
4
= 2.33
0242.22
L4
x
AP = 3.06
L2 = 1.0
W2
31°
B
03 L3 = 2.06
P
1
8
5
.06
6
7
P'
The link lengths, gear ratio (2), phase angle (Ø), and the value of 02 for some geared five bar
linkages are defined in Table 2. The linkage configuration and terminology are shown in Figure
2. For the rows assigned, find all possible solutions for angles 03 and 04 by the vector loop
method. Show your work in details: vector loop, vector equations, solution procedure.
Table 2
Row
Link 1 Link 2
Link 3
Link 4
Link 5
λ
Φ
Ө
a
6
1
7
9
4
2
30°
60°
P
y 4
YA
B
b
R4
R3
YA
A
Gear ratio:
a
02
d
05
r5
R5
R2
Phase angle: = 0₂-202
R1
05
02
r2
Figure 2.
04
X
Chapter 14 Solutions
Foundations of Materials Science and Engineering
Ch. 14.12 - Describe the classic model for electrical...Ch. 14.12 - Prob. 2KCPCh. 14.12 - Prob. 3KCPCh. 14.12 - Prob. 4KCPCh. 14.12 - Prob. 5KCPCh. 14.12 - Define the following quantities pertaining to the...Ch. 14.12 - Prob. 7KCPCh. 14.12 - What structural defects contribute to the residual...Ch. 14.12 - Prob. 9KCPCh. 14.12 - Prob. 10KCP
Ch. 14.12 - Prob. 11KCPCh. 14.12 - Prob. 12KCPCh. 14.12 - Prob. 13KCPCh. 14.12 - Prob. 14KCPCh. 14.12 - Prob. 15KCPCh. 14.12 - Prob. 16KCPCh. 14.12 - Prob. 17KCPCh. 14.12 - Prob. 18KCPCh. 14.12 - Prob. 19KCPCh. 14.12 - Prob. 20KCPCh. 14.12 - Prob. 21KCPCh. 14.12 - Prob. 22KCPCh. 14.12 - Prob. 23KCPCh. 14.12 - Prob. 24KCPCh. 14.12 - Prob. 25KCPCh. 14.12 - Prob. 26KCPCh. 14.12 - Prob. 27KCPCh. 14.12 - Describe the movement of the majority and minority...Ch. 14.12 - Prob. 29KCPCh. 14.12 - Prob. 30KCPCh. 14.12 - What is a zener diode? How does this device...Ch. 14.12 - Prob. 32KCPCh. 14.12 - Prob. 33KCPCh. 14.12 - Prob. 34KCPCh. 14.12 - Prob. 35KCPCh. 14.12 - Describe how the planar bipolar transistor can...Ch. 14.12 - Prob. 37KCPCh. 14.12 - Prob. 38KCPCh. 14.12 - Prob. 39KCPCh. 14.12 - Prob. 40KCPCh. 14.12 - Prob. 41KCPCh. 14.12 - Prob. 42KCPCh. 14.12 - Prob. 43KCPCh. 14.12 - Prob. 44KCPCh. 14.12 - Prob. 45KCPCh. 14.12 - Prob. 46KCPCh. 14.12 - Prob. 47KCPCh. 14.12 - Prob. 48KCPCh. 14.12 - Prob. 49KCPCh. 14.12 - Prob. 50KCPCh. 14.12 - Prob. 51KCPCh. 14.12 - Prob. 52KCPCh. 14.12 - Prob. 53KCPCh. 14.12 - What are ferroelectric domains? How can they be...Ch. 14.12 - Prob. 55KCPCh. 14.12 - Prob. 56KCPCh. 14.12 - What are the PZT piezoelectric materials? In what...Ch. 14.12 - Prob. 58AAPCh. 14.12 - Prob. 59AAPCh. 14.12 - Prob. 60AAPCh. 14.12 - Prob. 61AAPCh. 14.12 - Prob. 62AAPCh. 14.12 - Prob. 63AAPCh. 14.12 - Prob. 64AAPCh. 14.12 - Prob. 65AAPCh. 14.12 - Prob. 66AAPCh. 14.12 - Prob. 67AAPCh. 14.12 - Prob. 68AAPCh. 14.12 - Prob. 69AAPCh. 14.12 - Prob. 70AAPCh. 14.12 - Phosphorus is added to make an n-type silicon...Ch. 14.12 - Prob. 72AAPCh. 14.12 - A silicon wafer is doped with 2.50 1016 boron...Ch. 14.12 - A silicon wafer is doped with 2.50 1015...Ch. 14.12 - Prob. 75AAPCh. 14.12 - Prob. 76AAPCh. 14.12 - Prob. 77AAPCh. 14.12 - What fabrication techniques are used to encourage...Ch. 14.12 - Prob. 79AAPCh. 14.12 - Prob. 80AAPCh. 14.12 - Calculate the intrinsic electrical conductivity of...Ch. 14.12 - Prob. 82AAPCh. 14.12 - Prob. 83AAPCh. 14.12 - Prob. 85AAPCh. 14.12 - Prob. 86AAPCh. 14.12 - Prob. 87AAPCh. 14.12 - Prob. 88AAPCh. 14.12 - Prob. 89AAPCh. 14.12 - Prob. 90AAPCh. 14.12 - Prob. 91AAPCh. 14.12 - Prob. 92SEPCh. 14.12 - Prob. 93SEPCh. 14.12 - Design a p-type semiconductor based on Si that...Ch. 14.12 - Prob. 95SEPCh. 14.12 - Prob. 96SEPCh. 14.12 - Prob. 97SEPCh. 14.12 - Prob. 98SEPCh. 14.12 - Prob. 99SEPCh. 14.12 - Prob. 100SEP
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