Foundations of Materials Science and Engineering
6th Edition
ISBN: 9781259696558
Author: SMITH
Publisher: MCG
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Chapter 14.12, Problem 71AAP
Phosphorus is added to make an n-type silicon semiconductor with an electrical conductivity of 250 Ω · m−1. Calculate the necessary number of charge carriers required.
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Problem4.
The thin uniform disk of mass m = 1-kg and radius R = 0.1m spins about the bent shaft OG with
the angular speed w2 = 20 rad/s. At the same time, the shaft rotates about the z-axis with the angular
speed 001 = 10 rad/s. The angle between the bent portion of the shaft and the z-axis is ẞ = 35°. The
mass of the shaft is negligible compared to the mass of the disk.
a. Find the angular momentum of the disk with respect to point G, based on the axis
orientation as shown. Include an MVD in your solution.
b. Find the angular momentum of the disk with respect to point O, based on the axis
orientation as shown. (Note: O is NOT the center of fixed-point rotation.)
c. Find the kinetic energy of the assembly.
z
R
R
002
2R
x
Answer: H = -0.046ĵ-0.040 kg-m²/sec
Ho=-0.146-0.015 kg-m²/sec
T 0.518 N-m
=
Problem 3.
The assembly shown consists of a solid sphere of mass m and the uniform slender rod of the same
mass, both of which are welded to the shaft. The assembly is rotating with angular velocity w at a
particular moment. Find the angular momentum with respect to point O, in terms of the axes
shown.
Answer: Ñ。 = ½mc²wcosßsinßĵ + (}{mr²w + 2mb²w + ½ mc²wcos²ß) k
3
m
r
b
2
C
لا
m
Only question 2
Chapter 14 Solutions
Foundations of Materials Science and Engineering
Ch. 14.12 - Describe the classic model for electrical...Ch. 14.12 - Prob. 2KCPCh. 14.12 - Prob. 3KCPCh. 14.12 - Prob. 4KCPCh. 14.12 - Prob. 5KCPCh. 14.12 - Define the following quantities pertaining to the...Ch. 14.12 - Prob. 7KCPCh. 14.12 - What structural defects contribute to the residual...Ch. 14.12 - Prob. 9KCPCh. 14.12 - Prob. 10KCP
Ch. 14.12 - Prob. 11KCPCh. 14.12 - Prob. 12KCPCh. 14.12 - Prob. 13KCPCh. 14.12 - Prob. 14KCPCh. 14.12 - Prob. 15KCPCh. 14.12 - Prob. 16KCPCh. 14.12 - Prob. 17KCPCh. 14.12 - Prob. 18KCPCh. 14.12 - Prob. 19KCPCh. 14.12 - Prob. 20KCPCh. 14.12 - Prob. 21KCPCh. 14.12 - Prob. 22KCPCh. 14.12 - Prob. 23KCPCh. 14.12 - Prob. 24KCPCh. 14.12 - Prob. 25KCPCh. 14.12 - Prob. 26KCPCh. 14.12 - Prob. 27KCPCh. 14.12 - Describe the movement of the majority and minority...Ch. 14.12 - Prob. 29KCPCh. 14.12 - Prob. 30KCPCh. 14.12 - What is a zener diode? How does this device...Ch. 14.12 - Prob. 32KCPCh. 14.12 - Prob. 33KCPCh. 14.12 - Prob. 34KCPCh. 14.12 - Prob. 35KCPCh. 14.12 - Describe how the planar bipolar transistor can...Ch. 14.12 - Prob. 37KCPCh. 14.12 - Prob. 38KCPCh. 14.12 - Prob. 39KCPCh. 14.12 - Prob. 40KCPCh. 14.12 - Prob. 41KCPCh. 14.12 - Prob. 42KCPCh. 14.12 - Prob. 43KCPCh. 14.12 - Prob. 44KCPCh. 14.12 - Prob. 45KCPCh. 14.12 - Prob. 46KCPCh. 14.12 - Prob. 47KCPCh. 14.12 - Prob. 48KCPCh. 14.12 - Prob. 49KCPCh. 14.12 - Prob. 50KCPCh. 14.12 - Prob. 51KCPCh. 14.12 - Prob. 52KCPCh. 14.12 - Prob. 53KCPCh. 14.12 - What are ferroelectric domains? How can they be...Ch. 14.12 - Prob. 55KCPCh. 14.12 - Prob. 56KCPCh. 14.12 - What are the PZT piezoelectric materials? In what...Ch. 14.12 - Prob. 58AAPCh. 14.12 - Prob. 59AAPCh. 14.12 - Prob. 60AAPCh. 14.12 - Prob. 61AAPCh. 14.12 - Prob. 62AAPCh. 14.12 - Prob. 63AAPCh. 14.12 - Prob. 64AAPCh. 14.12 - Prob. 65AAPCh. 14.12 - Prob. 66AAPCh. 14.12 - Prob. 67AAPCh. 14.12 - Prob. 68AAPCh. 14.12 - Prob. 69AAPCh. 14.12 - Prob. 70AAPCh. 14.12 - Phosphorus is added to make an n-type silicon...Ch. 14.12 - Prob. 72AAPCh. 14.12 - A silicon wafer is doped with 2.50 1016 boron...Ch. 14.12 - A silicon wafer is doped with 2.50 1015...Ch. 14.12 - Prob. 75AAPCh. 14.12 - Prob. 76AAPCh. 14.12 - Prob. 77AAPCh. 14.12 - What fabrication techniques are used to encourage...Ch. 14.12 - Prob. 79AAPCh. 14.12 - Prob. 80AAPCh. 14.12 - Calculate the intrinsic electrical conductivity of...Ch. 14.12 - Prob. 82AAPCh. 14.12 - Prob. 83AAPCh. 14.12 - Prob. 85AAPCh. 14.12 - Prob. 86AAPCh. 14.12 - Prob. 87AAPCh. 14.12 - Prob. 88AAPCh. 14.12 - Prob. 89AAPCh. 14.12 - Prob. 90AAPCh. 14.12 - Prob. 91AAPCh. 14.12 - Prob. 92SEPCh. 14.12 - Prob. 93SEPCh. 14.12 - Design a p-type semiconductor based on Si that...Ch. 14.12 - Prob. 95SEPCh. 14.12 - Prob. 96SEPCh. 14.12 - Prob. 97SEPCh. 14.12 - Prob. 98SEPCh. 14.12 - Prob. 99SEPCh. 14.12 - Prob. 100SEP
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