You've been asked to bias the BJT shown below to set VB=(1/3) VCC, and VC=(2/3) VCC while the collector current IC=2.8 mA and IB2 is one tenth of IC. At this bias condition VBE is approximately 0.7 V. The goal is to allow it to be used as an amplifier where VCC=9 V. The transistor is at room temperature, where VT=25 mV and has a large beta. If an ideal voltage source applies an input voltage vin to the base of the transistor, and the output is taken at the collector (point Vc), what is the gain in V/V, rounded to the nearest whole number?

You've been asked to bias the BJT shown below to set VB=(1/3) VCC, and VC=(2/3) VCC while the collector current IC=2.8 mA and IB2 is one tenth of IC. At this bias condition VBE is approximately 0.7 V. The goal is to allow it to be used as an amplifier where VCC=9 V. The transistor is at room temperature, where VT=25 mV and has a large beta. If an ideal voltage source applies an input voltage vin to the base of the transistor, and the output is taken at the collector (point Vc), what is the gain in V/V, rounded to the nearest whole number?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

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You've been asked to bias the BJT shown below to set VB=(1/3) VCC, and VC=(2/3)
VCC while the collector current IC=2.8 mA and IB2 is one tenth of IC. At this bias
condition VBE is approximately 0.7 V. The goal is to allow it to be used as an
amplifier where VCC=9 V. The transistor is at room temperature, where VT=25 mV
and has a large beta. If an ideal voltage source applies an input voltage vin to the
base of the transistor, and the output is taken at the collector (point Vc), what is the
gain in V/V, rounded to the nearest whole number?

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