04: A power transistor is specified to have a maximum junction temperature of 130°C. When the device is operated at this junction temperature with a heat sink, the case temperature is found to be 90°C The case is attached to the heat sink with a bond having a thermal resistance 6cs-0.5°C/W and the thermal resistance of the heat sink 0SA-0.1°C/W. If the ambient temperature is 30°C, what is the power being dissipated in the device? what is the thermal resistance of the device from junction to case 0₁c?.
04: A power transistor is specified to have a maximum junction temperature of 130°C. When the device is operated at this junction temperature with a heat sink, the case temperature is found to be 90°C The case is attached to the heat sink with a bond having a thermal resistance 6cs-0.5°C/W and the thermal resistance of the heat sink 0SA-0.1°C/W. If the ambient temperature is 30°C, what is the power being dissipated in the device? what is the thermal resistance of the device from junction to case 0₁c?.
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Transcribed Image Text:04:
A power transistor is specified to have a maximum junction temperature of 130°C.
When the device is operated at this junction temperature with a heat sink, the case
temperature is found to be 90°C The case is attached to the heat sink with a bond
having a thermal resistance 6cs-0.5°C/W and the thermal resistance of the heat sink
0SA-0.1°C/W. If the ambient temperature is 30°C, what is the power being dissipated
in the device? what is the thermal resistance of the device from junction to case 0₁c?.
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