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What will be the majority and minority carrier concentrations in a P-Type Semiconductor, if the intrinsic concentration at 300 K is 1.45 x 10¹⁰/ cm³, and the dopant acceptor atom concentration is 10¹⁵/ cm³?

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The effective density of states of a piece of silicon is Nc = 2x 19 cm3 in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in the silicon? (d) What is the value of the Fermi-Dirac function f(E) at the conduction band edge?
A region of N-type semiconductor doped by Nd=10^15 cm^-3 is fully depleted of both majority and minority carriers by an external electric field. Assuming that the concentration of electron-hole pairs that is generated per unit time does not change when the semiconductor is depleted, determine the effective generation rate if the semiconductor is (a) Si (ni = 1.02 × 1010 cm-3) and (b) GaAs (ni = 2.1 × 106 cm-3). The minority-carrier lifetime is 1 μs in both cases.

What will be the majority and minority carrier concentrations in a P-Type Semiconductor, if the intrinsic concentration at 300 K is 1.45 x 1010/ cm3, and the dopant acceptor atom concentration is 1015/ cm3?