The two-port shown operates between two50 O resistors, at w = 500 Mra/s.(a) Find its scattering matrix.(b) What are the properties of the circuit?What role does it play?2. The two-port shown operates between two 50 Q resistors, at w = 500Mra/s.(a) Find its scattering matrix.(b) What are the properties of the circuit? What role does it play?0.1uHele400F0.1uH

The circuit is a lattice network Za=Zd and Zb=Zc then The network is an symmetrical and Balanced…

Answered: The two-port shown operates between two…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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9 Determine the saturation energy of the following lasers: a Nd:YAG at 1.06 µm; b Ti: Al203 at 800 nm; c ruby at 694.3 nm; d Nd:YVO4 at 1.06 µm.
Given: Single-stage, voltage-divider biased, common-emitter with 1. VCC = 14V 2. R1 = 32kohms 3. R2 = 7kohms 4. RC = 2kohms 5. RE = 1kohms 6. RS = 10ohms 7. RL = 2kohms 8. BDC = BAC = 135 9. ** 10.C, andC2 are coupling capacitors. 11.Cz is bypass capacitor 12. 13. Solve for: a. VB = Blank 1 V; b. VE = Blank 2 V ; c. IE = Blank 3 mA; d. VCE = Blank 4 V ; e. VC = Blank 5 V; f. re' = Blank 6 ohms ; g. Rin(base) = Blank 7 kohms ; h. Rin(tot) = Blank 8 kohms ; i. Voltage gain (Av) = Blank 9; j. Attenuation (Att) = Blank 10 ; k. Overall voltage gain (AVT) = Blank 11 ; %3D
Explain the simple RL circuits (Section 32.2, structure/decay of current through an inductor)?
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Figure 2: Front surface grid of solar cells A and B. d In the video preceding this excercise we derived an equation for the conversion efficiency of a solar cell, that includes components for all the loss mechanisms that occur in solar cells. We can combine the non-aborption and thermalization components into a single "spectral mismatch" component, which is also known as the ultimate efficiency. Furthermore, if we use the EQE, instead of the separate components for reflection losses, tranmission losses and recombination losses, the result is this equation for the solar cell efficiency: Eg. f $(A) da EQE (X) · A g:Voc . FF Eg Aret We will now use this equation to compare the efficiency of two solar cells, A and B, which have a different absorber layer. The two solar cells have the same basic structure and dimensions. The front surface of the solar cells is shown in Figure 2, where the width L = 10 [cm], length W = 8 [cm] and the thickness of the metallic fingers and busbars d = 0.3…
Assume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°C
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The two-port shown operates between two 50 N resistors, at w = 500 Mra/s. (a) Find its scattering matrix. (b) What are the properties of the circuit? What role does it play?