3:10 PM /2.A silicon p-n abrupt junction with NA = 6 x1016 cm3 andNo =6 x 1015/cm has3 x 1015/cm3 generation and recombination centerslocated at 0.02 eV above the intrinsic Fermi level ofsilicon with on = 0p = 00 =2x10-15 cm2. If vth = 107 cm/sec,calculate generation current density at a reverse biasvoltage VR=-0.7V.Assume T=30OK.Hint: Use Eq.56, p. 104 of the text (3rd Ed.).

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generation current density at a reverse bias

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Z parameter

The Z-parameters that are the impedance parameters of a two-port network are defined by expressing the two-port voltages V1 and V2 in terms of two-port currents I1 and I2. The Z-parameters are calculated by open circuiting one of the two ports at a time henceforth they are called open-circuit impedance parameters.

Question

3:10 PM /
2.
A silicon p-n abrupt junction with NA = 6 x1016 cm3 and
No =6 x 1015/cm has
3 x 1015/cm3 generation and recombination centers
located at 0.02 eV above the intrinsic Fermi level of
silicon with on = 0p = 00 =2x10-15 cm2. If vth = 107 cm/sec,
calculate generation current density at a reverse bias
voltage VR=-0.7V.
Assume T=30OK.
Hint: Use Eq.56, p. 104 of the text (3rd Ed.).

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