The p-type sample (N₁ = 10¹7 cm³) is uniformly illuminated with light at room temperature, resultingin an optical generation rate of 1020 cm ³sec¹.= 106 s.1) Find the excess carrier concentration if th2) Find the position of the Quasi Fermi levels FN and Fp with respect to the intrinsic level E₁.3) Find the position of the Fermi level with respect to the intrinsic level E₁.4) Draw the energy band diagram. Mark the forbidden gap, conduction band, valence band, Fermilevel, Quasi Fermi levels and intrinsic level.5) Comment on whether it is a low level or high-level injection. Explain your answer with reasons.

Answered: The p-type sample (N₁ = 10¹7 cm³³) is…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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The p-type sample (N₁ = 10¹7 cm³) is uniformly illuminated with light at room temperature, resulting
in an optical generation rate of 1020 cm ³sec¹.
= 106 s.
1) Find the excess carrier concentration if th
2) Find the position of the Quasi Fermi levels FN and Fp with respect to the intrinsic level E₁.
3) Find the position of the Fermi level with respect to the intrinsic level E₁.
4) Draw the energy band diagram. Mark the forbidden gap, conduction band, valence band, Fermi
level, Quasi Fermi levels and intrinsic level.
5) Comment on whether it is a low level or high-level injection. Explain your answer with reasons.

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The P-type sample

$N_{A} = 10^{17} c m^{- 3}$

Optical generation rate= $10^{20} c m^{- 3} s e c^{- 1}$

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