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The Fermi energy is 0.30 eV below the conduction band energy Ec at T = 400K. The value of Nc for silicon at 300K is Nc = 2.8×1019 cm-3. Calculate the thermal equilibrium electron concentration at T = 400K. O no = 2.17 x 1017 cm-³ X Ono = 2.24 X 1019 cm-3 no = 7.21 X 1015 cm-³ O no = 4.31 X 101⁹ cm-3

The Fermi energy is 0.30 eV below the conduction band energy Ec at T = 400K. The value of Nc for silicon at 300K is Nc = 2.8×1019 cm-3. Calculate the thermal equilibrium electron concentration at T = 400K. O no = 2.17 x 1017 cm-³ X Ono = 2.24 X 1019 cm-3 no = 7.21 X 1015 cm-³ O no = 4.31 X 101⁹ cm-3

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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The Fermi energy is 0.30 eV below the conduction band energy Ec at T = 400K. The value of Nc for silicon at 300K is Nc = 2.8x1019 cm 3. Calculate the thermal equilibrium electron concentration at T = 400K. O no = 2.17 X 1017 cm-3 O no = 2.24 X 1019 cm-3 no = 7.21 X 1015 cm-3 no = 4.31 X 101⁹ cm-3
Transcribed Image Text:The Fermi energy is 0.30 eV below the conduction band energy Ec at T = 400K. The value of Nc for silicon at 300K is Nc = 2.8x1019 cm 3. Calculate the thermal equilibrium electron concentration at T = 400K. O no = 2.17 X 1017 cm-3 O no = 2.24 X 1019 cm-3 no = 7.21 X 1015 cm-3 no = 4.31 X 101⁹ cm-3
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