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c) Consider an InGaAsP laser diode operating at 2=1310 nm for optical communications. The laser diode has an optical cavity of length 200 microns. The refractive index, n=3.5. The threshold current at 25°C is 30 mA. At i-40mA, the output optical power is 3mW and the voltage across the diode is 1.4V. If the diode current is increased to 45 mA, the optical output power increases to 4mW. Calculate external quantum efficiency (QE), external differential QE, external power efficiency of the laser diode.

c) Consider an InGaAsP laser diode operating at 2=1310 nm for optical communications. The laser diode has an optical cavity of length 200 microns. The refractive index, n=3.5. The threshold current at 25°C is 30 mA. At i-40mA, the output optical power is 3mW and the voltage across the diode is 1.4V. If the diode current is increased to 45 mA, the optical output power increases to 4mW. Calculate external quantum efficiency (QE), external differential QE, external power efficiency of the laser diode.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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2C) Please help with solving part C only.
Problem 2) - -Laser diode efficiency - a) There are several laser diode efficiency definitions as followed: The external quantum efficiency, NEQE, of a laser diode is defined as Number of output photons from the diode (per unit second) Number of injected electrons into diode (per unit second) 11 EQE The external differential quantum efficiency, MEDQE, of a laser diode is defined as Increase in the number of output photons from the diode (per unit second) 1 EDQE = Increase of the number of injected electrons into diode (per unit second) The external power efficiency, NEPE, of the laser diode is defined by Optical output power EPE = Electrical input power If Po is the emitted optical power, show that
Transcribed Image Text:Problem 2) - -Laser diode efficiency - a) There are several laser diode efficiency definitions as followed: The external quantum efficiency, NEQE, of a laser diode is defined as Number of output photons from the diode (per unit second) Number of injected electrons into diode (per unit second) 11 EQE The external differential quantum efficiency, MEDQE, of a laser diode is defined as Increase in the number of output photons from the diode (per unit second) 1 EDQE = Increase of the number of injected electrons into diode (per unit second) The external power efficiency, NEPE, of the laser diode is defined by Optical output power EPE = Electrical input power If Po is the emitted optical power, show that
11 EQE - 1 EDQE ePo EI edP dl E, g E (5) eV 1EPE=1EQE b) A commercial laser diode with an emission wavelength of 670 nm (red) has the following characteristics. The threshold current at 25°C is 76 mA. At I-80 mA, the output optical power is 2mW and the voltage across the diode is 2.3 V. If the diode current is increased to 82 mA, the optical output power increases to 3mW. Calculate the external QE, external differential QE and the external power efficiency of the laser diode. c) Consider an InGaAsP laser diode operating at λ=1310 nm for optical communications. The laser diode has an optical cavity of length 200 microns. The refractive index, n=3.5. The threshold current at 25°C is 30 mA. At i-40mA, the output optical power is 3mW and the voltage across the diode is 1.4V. If the diode current is increased to 45 mA, the optical output power increases to 4mW. Calculate external quantum efficiency (QE), external differential QE, external power efficiency of the laser diode.
Transcribed Image Text:11 EQE - 1 EDQE ePo EI edP dl E, g E (5) eV 1EPE=1EQE b) A commercial laser diode with an emission wavelength of 670 nm (red) has the following characteristics. The threshold current at 25°C is 76 mA. At I-80 mA, the output optical power is 2mW and the voltage across the diode is 2.3 V. If the diode current is increased to 82 mA, the optical output power increases to 3mW. Calculate the external QE, external differential QE and the external power efficiency of the laser diode. c) Consider an InGaAsP laser diode operating at λ=1310 nm for optical communications. The laser diode has an optical cavity of length 200 microns. The refractive index, n=3.5. The threshold current at 25°C is 30 mA. At i-40mA, the output optical power is 3mW and the voltage across the diode is 1.4V. If the diode current is increased to 45 mA, the optical output power increases to 4mW. Calculate external quantum efficiency (QE), external differential QE, external power efficiency of the laser diode.
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