2C) Please help with solving part C only. Problem 2) --Laser diode efficiency -a) There are several laser diode efficiency definitions as followed: Theexternal quantum efficiency, NEQE, of a laser diode is defined asNumber of output photons from the diode (per unit second)Number of injected electrons into diode (per unit second)11 EQEThe external differential quantum efficiency, MEDQE, of a laser diode is defined asIncrease in the number of output photons from the diode (per unit second)1 EDQE =Increase of the number of injected electrons into diode (per unit second)The external power efficiency, NEPE, of the laser diode is defined byOptical output powerEPE =Electrical input powerIf Po is the emitted optical power, show that 11 EQE-1 EDQEePoEIedPdlE,gE(5)eV1EPE=1EQEb) A commercial laser diode with an emission wavelength of 670 nm (red) has the followingcharacteristics. The threshold current at 25°C is 76 mA. At I-80 mA, the output opticalpower is 2mW and the voltage across the diode is 2.3 V. If the diode current is increased to82 mA, the optical output power increases to 3mW. Calculate the external QE, externaldifferential QE and the external power efficiency of the laser diode.c) Consider an InGaAsP laser diode operating at λ=1310 nm for optical communications.The laser diode has an optical cavity of length 200 microns. The refractive index, n=3.5. Thethreshold current at 25°C is 30 mA. At i-40mA, the output optical power is 3mW and thevoltage across the diode is 1.4V. If the diode current is increased to 45 mA, the opticaloutput power increases to 4mW. Calculate external quantum efficiency (QE), externaldifferential QE, external power efficiency of the laser diode.

Part c) Given: -A laser diode operating at 1310 nm.Find: -1) External quantum efficiency.2) External…

c) Consider an InGaAsP laser diode operating at 2=1310 nm for optical communications. The laser diode has an optical cavity of length 200 microns. The refractive index, n=3.5. The threshold current at 25°C is 30 mA. At i-40mA, the output optical power is 3mW and the voltage across the diode is 1.4V. If the diode current is increased to 45 mA, the optical output power increases to 4mW. Calculate external quantum efficiency (QE), external differential QE, external power efficiency of the laser diode.

c) Consider an InGaAsP laser diode operating at 2=1310 nm for optical communications. The laser diode has an optical cavity of length 200 microns. The refractive index, n=3.5. The threshold current at 25°C is 30 mA. At i-40mA, the output optical power is 3mW and the voltage across the diode is 1.4V. If the diode current is increased to 45 mA, the optical output power increases to 4mW. Calculate external quantum efficiency (QE), external differential QE, external power efficiency of the laser diode.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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