Find Dn for doped silicon using: un = 1250 cm2/V.s and up = 380 cm2/V.s. Assume T=300k32.38 cm/s32.38cm2/s9,84 cm2/s9.84 cm/s Find the values of the intrinsic carrier concentration ni for silicon at -223 °CO 10.6x 10-30 carriers/cm39.8 x 10-53 carriers/cm319.6 x 1039carriers/cmO 98 x 10-53 carriers/cm2

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Answered: Find Dn for doped silicon using: un =…

Find Dn for doped silicon using: un = 1250 cm2/V.s and up 380 cm2/V.s. Assume T=300k O 32.38 cm/s 32.38 cm2/s 9.84 cm2/s 9.84 cm/s

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Find Dn for doped silicon using: un = 1250 cm2/V.s and up = 380 cm2/V.s. Assume T=300k
32.38 cm/s
32.38cm2/s
9,84 cm2/s
9.84 cm/s

Find the values of the intrinsic carrier concentration ni for silicon at -223 °C
O 10.6x 10-30 carriers/cm3
9.8 x 10-53 carriers/cm3
19.6 x 1039
carriers/cm
O 98 x 10-53 carriers/cm2

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