At the temperature (3000 k) we find that (ni = 1.45 x 10¹6) e/m³ in silicon and (n = 2.5 x 101⁹) e/m³ in germanium and the energy gap in silicon is equal to (1.1ev) and in germanium is equal to (0.66 ev) What is the ratio of the density of the donor added to silicon to the density of the donor added to germanium that makes the Fermi level in the two materials at the same distance from the edge of the conduction band?

At the temperature (3000 k) we find that (ni = 1.45 x 10¹6) e/m³ in silicon and (n = 2.5 x 101⁹) e/m³ in germanium and the energy gap in silicon is equal to (1.1ev) and in germanium is equal to (0.66 ev) What is the ratio of the density of the donor added to silicon to the density of the donor added to germanium that makes the Fermi level in the two materials at the same distance from the edge of the conduction band?

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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Question

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At the temperature (300⁰ k) we find that (n; = 1.45 × 10¹6)
e/m³ in silicon
and (n = 2.5 × 10¹9) e/m³ in germanium and the energy
gap in silicon is equal to (1.1ev) and in germanium is
equal to (0.66 ev)
What is the ratio of the density of the donor added to
silicon to the density of the donor added to germanium
that makes the Fermi level in the two materials at the
same distance from the edge of the conduction band?

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