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2- The mobilities for intrinsic silicon at a certain temperature are pe = 0.14 m²/V-s and ₁= 0.035 m²/V-s. The concentration of both holes and electrons is 2.2 x 1015 m-3. Determine both the conductivity and the resistivity of this silicon sample: Use a = -Pelle + Phith = (1.6 x 10-19C) (2.2 x 10¹6 m-3)(0.14 m²/V-s+ 0.035 m²/V-s) = 6.2 x 10 S/m Conductivity is p= 1/0 = 1.6 x 10³ 2-m. A little donor impurity, such as arsenic, is added to pure silicon so that the electron concentration s 2 x 1017 conduction electrons per cubic meter while the number of holes per cubic meter is only 1.1x1015. If fle=0.15 m²/V s for this sample, and p = 0.045 m²/V-s, determine the conductivity and resistivity: -=-Pelle + Phl= (1.6 × 10-19) [(2 x 1017) (0.15) + (1.1 x 10¹5) (0.045)]=4.8 x 10-³ s/m Then p= 1/a=2.1 x 10² m.

2- The mobilities for intrinsic silicon at a certain temperature are pe = 0.14 m²/V-s and ₁= 0.035 m²/V-s. The concentration of both holes and electrons is 2.2 x 1015 m-3. Determine both the conductivity and the resistivity of this silicon sample: Use a = -Pelle + Phith = (1.6 x 10-19C) (2.2 x 10¹6 m-3)(0.14 m²/V-s+ 0.035 m²/V-s) = 6.2 x 10 S/m Conductivity is p= 1/0 = 1.6 x 10³ 2-m. A little donor impurity, such as arsenic, is added to pure silicon so that the electron concentration s 2 x 1017 conduction electrons per cubic meter while the number of holes per cubic meter is only 1.1x1015. If fle=0.15 m²/V s for this sample, and p = 0.045 m²/V-s, determine the conductivity and resistivity: -=-Pelle + Phl= (1.6 × 10-19) [(2 x 1017) (0.15) + (1.1 x 10¹5) (0.045)]=4.8 x 10-³ s/m Then p= 1/a=2.1 x 10² m.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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2- The mobilities for intrinsic silicon at a certain temperature are pe = 0.14 m²/V-s and th 0.035 m²/V-s. The concentration of both holes and electrons is 2.2 x 10¹5 m-3. Determine both the conductivity and the resistivity of this silicon sample: Use 0 = -Pelle+Phith = (1.6 x 10-19C) (2.2 x 10¹6 m-3)(0.14 m²/V-s+ 0.035 m²/V-s) = 6.2 x 10 S/m Conductivity is p= 1/0 = 1.6 x 10³ 22-m. 3- A little donor impurity, such as arsenic, is added to pure silicon so that the electron concentration is 2 x 1017 conduction electrons per cubic meter while the number of holes per cubic meter is only 1.1x1015, Ife = 0.15 m²/Vs for this sample, and p = 0.045 m²/V-s, determine the conductivity and resistivity: o = -Pelle + Phlth = (1.6 x 10-19) [(2 x 10¹7) (0.15)+(1.1 × 10¹5) Then p= 1/0 = 2.1 x 10² m. 10¹5)(0.045)]=4.8 x 10-3 s/m
Transcribed Image Text:2- The mobilities for intrinsic silicon at a certain temperature are pe = 0.14 m²/V-s and th 0.035 m²/V-s. The concentration of both holes and electrons is 2.2 x 10¹5 m-3. Determine both the conductivity and the resistivity of this silicon sample: Use 0 = -Pelle+Phith = (1.6 x 10-19C) (2.2 x 10¹6 m-3)(0.14 m²/V-s+ 0.035 m²/V-s) = 6.2 x 10 S/m Conductivity is p= 1/0 = 1.6 x 10³ 22-m. 3- A little donor impurity, such as arsenic, is added to pure silicon so that the electron concentration is 2 x 1017 conduction electrons per cubic meter while the number of holes per cubic meter is only 1.1x1015, Ife = 0.15 m²/Vs for this sample, and p = 0.045 m²/V-s, determine the conductivity and resistivity: o = -Pelle + Phlth = (1.6 x 10-19) [(2 x 10¹7) (0.15)+(1.1 × 10¹5) Then p= 1/0 = 2.1 x 10² m. 10¹5)(0.045)]=4.8 x 10-3 s/m
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