Table 1ReIs = 100 µAVCE (V) Ic (mA) VCE (V) Ic (mA) VCE (V) I (mA)IB = 50 µAIB = 150 µA%3D%3D%3D120 0POSCNE11.222.530.956 KO411.7425.0436.46.12.326.939.6813.18.28.8842.81014.11031.01045.0Figure 1Find the hoe of the transistor at IB = 100 µA and VCE = 6 V from the plotted output characteristics.

Table 1 Is = 150 µA I : = 100 µA VCE (V) Ic (mA) | VCE (V) | Ic (mA) VCE (V) | Ic (mA) = 50 µA %3D 120 0 0. IN 11.2 22.5 30.9 6 KO 4 11.7 4. 25.0 4 36.4 6. 6. 12.3 13.1 26.9 28.8 39.6 42.8 8. 8. 8. 10 14.1 10 31.0 10 45.0 Figure 1 Find the hoe of the transistor at IB = 100 µA and VCE = 6 V from the plotted output characteristics. %3D

Table 1 Is = 150 µA I : = 100 µA VCE (V) Ic (mA) | VCE (V) | Ic (mA) VCE (V) | Ic (mA) = 50 µA %3D 120 0 0. IN 11.2 22.5 30.9 6 KO 4 11.7 4. 25.0 4 36.4 6. 6. 12.3 13.1 26.9 28.8 39.6 42.8 8. 8. 8. 10 14.1 10 31.0 10 45.0 Figure 1 Find the hoe of the transistor at IB = 100 µA and VCE = 6 V from the plotted output characteristics. %3D

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

5a. What is E2=? 5b. What is E3=? 5c. What is the potential difference of b relative to point a (V_ba)?
Electrical Engineering please solve this thank you The following values are given for a shocdley diode Vi (derel vollaye) • 0.025 V Is (Deverse salunalia cmal): 10X10A -15 Given voltaye eg ^: v(t) = 0.7+ 8 Vr cosut IA RL= 50 0 %3D Find avg. powen diipted in shochly diode € ay.power deliveud to load
Suppose a semiconductor has ND=1016/cm3, NA = 5×1016/cm3, and ni =1011/cm3. What are the electron and hole concentrations?
A gallium arsenide semiconductor at T = 300 K is homogeneously doped with Nd= 5 X 1016 cm-3 and N₂ = 0. Calculate the a drift current for an applied E field of 20 V/cm Jdrf = 1360 A/cm² Jdrf = 2432 A/cm² drf = 624 A/cm² Jdrf=512 A/cm²
please do it now
Q1
Problem 22: For the following circuit, find Va in Volts. Ra = R2 Va Pode Vx= -40v = - ten Vots エ4 エ2 R3 bVx= -40v Io I3 Vi aV= 2v Vo Ra= R2 = 1k =1000 R1 = R, = 1k=10002 %3D R3= 5k = 50002 The Diode is a zenier diode with a for ward Bias voltage of 0.6 voHs and a Zen 1er voltage of 5,0 (Five ) volts
The diode from the following characteristic curve in Figure 1 was changed to zenerdiode. Determine: the function of zener diode in reverse biased. Briefly explain the differencebetween conventional diode and zener diode.
find the average power consume by RL for both fullwave and halfwave rectifier circuit.
need help with d and e
2. Find out the VOC and the fill factors (FFs) for solar cells with an Io of 10-18 A/cm2 for the following cases. a. Jsc =10 mA/cm2 and Rsh (shunt or parallel resistance)=1 k Ohm cm2b. Jsc =100 mA/cm2 and Rsh (shunt or parallel resistance)=100 k Ohm cm2
In the figure below, calculate the following (use the second diode approximation): No: Ng 6:1 Vp 120 Vac 60 Hz (a) Vs (b) Vout(pk) (c) Vdc Vs D₁ Si Vout R₁ = 50 (d) IL (e) PIV for D₁ (f) fout