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Rs = 10 kQ Rp =5 kQ RL = 4 kQ 10 ΚΩ 4 k2 v* = +5 V V=-5 V -7 Figure P4.48 4.48 For the common-gate circuit in Figure P4.48, the NMOS transistor parameters are: VTN = 1 V, K„ = 3 mA/V², and 2 = 0. (a) Determine Ipg and VpsQ- (b) Calculate gm, and r,. (c) Find the small-signal voltage gain A, = v,/v;.

Rs = 10 kQ Rp =5 kQ RL = 4 kQ 10 ΚΩ 4 k2 v* = +5 V V=-5 V -7 Figure P4.48 4.48 For the common-gate circuit in Figure P4.48, the NMOS transistor parameters are: VTN = 1 V, K„ = 3 mA/V², and 2 = 0. (a) Determine Ipg and VpsQ- (b) Calculate gm, and r,. (c) Find the small-signal voltage gain A, = v,/v;.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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### Transcription for Educational Use **Figure P4.48 Description:** The schematic in Figure P4.48 illustrates a common-gate circuit featuring an NMOS transistor. The circuit includes: - An NMOS transistor with symbols for components labeled in pink (presumed to indicate the gate, source, and drain). - A voltage source \( v_i \) that provides input to the circuit. - Capacitors \( C_{C1} \) and \( C_{C2} \), which are coupled with resistors. - Two resistors \( R_S = 10 \, \text{k}\Omega \) and \( R_D = 5 \, \text{k}\Omega \). - A load resistor \( R_L = 4 \, \text{k}\Omega \) connected to the output \( v_o \). **Diagrams Explained:** The schematic features a typical NMOS transistor setup with coupling capacitors and load resistors forming a common-gate topology, often used in high-frequency applications to maintain a low input impedance. **Problem Statement (4.48):** The task is to analyze the circuit in Figure P4.48 using the given NMOS transistor parameters: - Threshold voltage, \( V_{TN} = 1 \, \text{V} \). - Transconductance parameter, \( K_n = 3 \, \text{mA/V}^2 \). - Channel length modulation parameter, \( \lambda = 0 \). **Tasks:** (a) **Determine \( I_{DQ} \) and \( V_{DSQ} \):** - Find the quiescent drain current \( I_{DQ} \) and the quiescent drain-source voltage \( V_{DSQ} \). (b) **Calculate \( g_m \) and \( r_o \):** - Compute the transconductance \( g_m \) and the output resistance \( r_o \). (c) **Find the small-signal voltage gain \( A_v = v_o / v_i \):** - Determine the voltage gain of the common-gate configuration using the given parameters. This exercise encourages understanding of the static and dynamic characteristics of a common-gate NMOS configuration, vital for electronic circuit design and analysis.
Transcribed Image Text:### Transcription for Educational Use **Figure P4.48 Description:** The schematic in Figure P4.48 illustrates a common-gate circuit featuring an NMOS transistor. The circuit includes: - An NMOS transistor with symbols for components labeled in pink (presumed to indicate the gate, source, and drain). - A voltage source \( v_i \) that provides input to the circuit. - Capacitors \( C_{C1} \) and \( C_{C2} \), which are coupled with resistors. - Two resistors \( R_S = 10 \, \text{k}\Omega \) and \( R_D = 5 \, \text{k}\Omega \). - A load resistor \( R_L = 4 \, \text{k}\Omega \) connected to the output \( v_o \). **Diagrams Explained:** The schematic features a typical NMOS transistor setup with coupling capacitors and load resistors forming a common-gate topology, often used in high-frequency applications to maintain a low input impedance. **Problem Statement (4.48):** The task is to analyze the circuit in Figure P4.48 using the given NMOS transistor parameters: - Threshold voltage, \( V_{TN} = 1 \, \text{V} \). - Transconductance parameter, \( K_n = 3 \, \text{mA/V}^2 \). - Channel length modulation parameter, \( \lambda = 0 \). **Tasks:** (a) **Determine \( I_{DQ} \) and \( V_{DSQ} \):** - Find the quiescent drain current \( I_{DQ} \) and the quiescent drain-source voltage \( V_{DSQ} \). (b) **Calculate \( g_m \) and \( r_o \):** - Compute the transconductance \( g_m \) and the output resistance \( r_o \). (c) **Find the small-signal voltage gain \( A_v = v_o / v_i \):** - Determine the voltage gain of the common-gate configuration using the given parameters. This exercise encourages understanding of the static and dynamic characteristics of a common-gate NMOS configuration, vital for electronic circuit design and analysis.
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