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4.3 PMOS Transistors 4.47. Calculate K, for a PMOS transistor with u, 200 cm2/V · s for an oxide thickness of (a) 50 nm, (b) 20 nm, (c) 10 nm, and (d)5 nm. %3D • S

4.3 PMOS Transistors 4.47. Calculate K, for a PMOS transistor with u, 200 cm2/V · s for an oxide thickness of (a) 50 nm, (b) 20 nm, (c) 10 nm, and (d)5 nm. %3D • S

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Text Problem 4.47 for PMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.

NMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY Equations (4.25) through (4.29) represent the complete model for the i-v behavior of the NMOS transistor. For all regions, W K, = K, I K = 4,Cx iG =0 ig =0 (4.25) Cutoff region: + G ip = 0 for vGS < VTN (4.26) -OB UDS Triode region: UGS VDS ip = K, (vGS - VTN - for vGs – VTN 2 Ups 20 UpS (4.27) NMOS transistor Saturation region: Km (VGs - VTN) (1+ivps) ip = 2 for vps 2 (VGS – VTN) 2 0 (4.28) Threshold voltage: VTN = VTo + Y (VUSB + 2¢F VIN > 0 for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be 20F (4.29) fabricated, and VTN 0 for these transistors. PMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY Equations (4.30) through (4.34) represent the complete model for the i-v behavior of the PMOS transistor. For all regions W (4.30) K, = K' L K, = 4,C ig = 0 ig = 0 Cutoff region: ip = 0 for VGs 2 VTP (4.31) UBS OB Ups Triode region: ip = K, VGS-VTP- VDS Ups 2 for 0 < |vpsl < |VGS - VTP (4.32) PMOS transistor Saturation region: Kp in = (VGs - VTP) (1 + Alvosl) for |Ups] 2 |VGS – VTP 20 (4.33) Threshold voltage: VTP = VTO -v (VUBS +20F - V 20F) (4.34) For the enhancement-mode PMOS transistor, Vtp < 0. Depletion-mode PMOS devices can also be fabricated; VTp > 0 for these devices.
Transcribed Image Text:NMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY Equations (4.25) through (4.29) represent the complete model for the i-v behavior of the NMOS transistor. For all regions, W K, = K, I K = 4,Cx iG =0 ig =0 (4.25) Cutoff region: + G ip = 0 for vGS < VTN (4.26) -OB UDS Triode region: UGS VDS ip = K, (vGS - VTN - for vGs – VTN 2 Ups 20 UpS (4.27) NMOS transistor Saturation region: Km (VGs - VTN) (1+ivps) ip = 2 for vps 2 (VGS – VTN) 2 0 (4.28) Threshold voltage: VTN = VTo + Y (VUSB + 2¢F VIN > 0 for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be 20F (4.29) fabricated, and VTN 0 for these transistors. PMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY Equations (4.30) through (4.34) represent the complete model for the i-v behavior of the PMOS transistor. For all regions W (4.30) K, = K' L K, = 4,C ig = 0 ig = 0 Cutoff region: ip = 0 for VGs 2 VTP (4.31) UBS OB Ups Triode region: ip = K, VGS-VTP- VDS Ups 2 for 0 < |vpsl < |VGS - VTP (4.32) PMOS transistor Saturation region: Kp in = (VGs - VTP) (1 + Alvosl) for |Ups] 2 |VGS – VTP 20 (4.33) Threshold voltage: VTP = VTO -v (VUBS +20F - V 20F) (4.34) For the enhancement-mode PMOS transistor, Vtp < 0. Depletion-mode PMOS devices can also be fabricated; VTp > 0 for these devices.
TABLE 4.6 MOS Transistor Parameters NMOS DEVICE PMOS DEVICE VTO +0.75 V -0.75 V 0.75 V 0.5/V 20F K' 0.6 V 0.6 V 100 µ.A/V2 40 μ.Α/V2 Eox =3.9ɛ, and ɛ, = 11.7ɛ, where ɛ, =8.854 x 10-14 F/cm %3D 4.3 PMOS Transistors 4.47. Calculate K, for a PMOS transistor with u, = 200 cm2/V · s for an oxide thickness of (a) 50 nm, (b) 20 nm, (c) 10 nm, and (d) 5 nm.
Transcribed Image Text:TABLE 4.6 MOS Transistor Parameters NMOS DEVICE PMOS DEVICE VTO +0.75 V -0.75 V 0.75 V 0.5/V 20F K' 0.6 V 0.6 V 100 µ.A/V2 40 μ.Α/V2 Eox =3.9ɛ, and ɛ, = 11.7ɛ, where ɛ, =8.854 x 10-14 F/cm %3D 4.3 PMOS Transistors 4.47. Calculate K, for a PMOS transistor with u, = 200 cm2/V · s for an oxide thickness of (a) 50 nm, (b) 20 nm, (c) 10 nm, and (d) 5 nm.
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