Text Problems 4.8 for NMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters. TABLE 4.6MOS Transistor ParametersNMOS DEVICEPMOS DEVICEVro+0.75 V-0.75 V0.75/V0.5/V20F0.6 V0.6 VK'100 µ.A/V240 μΑ/VEox =3.9ɛ, and ɛ, = 11.7ɛ, where ɛ, =8.854 x 10-14 F/cm4.8. An NMOS transistor has K=200 µA/V?. Whatis the value of K, if W=60 µm, L=3 µm?If W=10 um, L=0.25 um? If W=3 µm,%3D%3DL=40 nm?%3D NMOS TRANSISTOR MATHEMATICAL MODEL SUMMARYEquations (4.25) through (4.29) represent the complete model for the i-v behavior of the NMOStransistor.For all regions,WK, = K, IK = 4,CxiG =0ig =0(4.25)Cutoff region:+Gip = 0for vGS < VTN(4.26)-OB UDSTriode region:UGSVDSip = K, (vGS - VTN -for vGs – VTN 2 Ups 20UpS(4.27)NMOS transistorSaturation region:Km(VGs - VTN) (1+ivps)ip =2for vps 2 (VGS – VTN) 2 0(4.28)Threshold voltage:VTN = VTo + Y (VUSB + 2¢FVIN > 0 for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be20F(4.29)fabricated, and VTN 0 for these transistors.PMOS TRANSISTOR MATHEMATICAL MODEL SUMMARYEquations (4.30) through (4.34) represent the complete model for the i-v behavior of the PMOStransistor.For all regionsW(4.30)K, = K'LK, = 4,Cig = 0ig = 0Cutoff region:ip = 0for VGs 2 VTP(4.31)UBSOB Ups Triode region:ip = K, VGS-VTP-VDSUps2for 0 < |vpsl < |VGS - VTP(4.32)PMOS transistorSaturation region:Kpin =(VGs - VTP) (1 + Alvosl)for |Ups] 2 |VGS – VTP 20(4.33)Threshold voltage:VTP = VTO -v (VUBS +20F - V 20F)(4.34)For the enhancement-mode PMOS transistor, Vtp < 0. Depletion-mode PMOS devices can also befabricated; VTp > 0 for these devices.

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Introductory Circuit Analysis (13th Edition)

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Text Problems 4.8 for NMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.

TABLE 4.6
MOS Transistor Parameters
NMOS DEVICE
PMOS DEVICE
Vro
+0.75 V
-0.75 V
0.75/V
0.5/V
20F
0.6 V
0.6 V
K'
100 µ.A/V2
40 μΑ/V
Eox =3.9ɛ, and ɛ, = 11.7ɛ, where ɛ, =8.854 x 10-14 F/cm
4.8. An NMOS transistor has K=200 µA/V?. What
is the value of K, if W=60 µm, L=3 µm?
If W=10 um, L=0.25 um? If W=3 µm,
%3D
%3D
L=40 nm?
%3D

NMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.25) through (4.29) represent the complete model for the i-v behavior of the NMOS
transistor.
For all regions,
W
K, = K, I
K = 4,Cx
iG =0
ig =0
(4.25)
Cutoff region:
+
G
ip = 0
for vGS < VTN
(4.26)
-OB UDS
Triode region:
UGS
VDS
ip = K, (vGS - VTN -
for vGs – VTN 2 Ups 20
UpS
(4.27)
NMOS transistor
Saturation region:
Km
(VGs - VTN) (1+ivps)
ip =
2
for vps 2 (VGS – VTN) 2 0
(4.28)
Threshold voltage:
VTN = VTo + Y (VUSB + 2¢F
VIN > 0 for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be
20F
(4.29)
fabricated, and VTN 0 for these transistors.
PMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.30) through (4.34) represent the complete model for the i-v behavior of the PMOS
transistor.
For all regions
W
(4.30)
K, = K'
L
K, = 4,C
ig = 0
ig = 0
Cutoff region:
ip = 0
for VGs 2 VTP
(4.31)
UBS
OB Ups Triode region:
ip = K, VGS-VTP-
VDS
Ups
2
for 0 < |vpsl < |VGS - VTP
(4.32)
PMOS transistor
Saturation region:
Kp
in =
(VGs - VTP) (1 + Alvosl)
for |Ups] 2 |VGS – VTP 20
(4.33)
Threshold voltage:
VTP = VTO -v (VUBS +20F - V 20F)
(4.34)
For the enhancement-mode PMOS transistor, Vtp < 0. Depletion-mode PMOS devices can also be
fabricated; VTp > 0 for these devices.

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Transistors :

Transistors are the key component of modern electronics.
A transistors is made up of semiconductor material, which is used to amplify or switch electric signals and energy.
A transistors has at least three terminals for connecting to a circuit outside of it,
which are :

Collector
Base
Emitter

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