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What is ICEO and how is it related to ICBO? How do these two parameters change with temperature? Give typical values for each at room temperature and at maximum temperature.

What is ICEO and how is it related to ICBO? How do these two parameters change with temperature? Give typical values for each at room temperature and at maximum temperature.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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**Question**: What is \( I_{CEO} \) and how is it related to \( I_{CBO} \)? How do these two parameters change with temperature? Give typical values for each at room temperature and at maximum temperature. **Explanation**: - \( I_{CEO} \) refers to the collector-emitter leakage current when the base is open. - \( I_{CBO} \) refers to the collector-base leakage current when the emitter is open. These currents are related through the transistor configuration and characteristics, particularly in terms of how leakage currents manifest in different configurations. Both \( I_{CEO} \) and \( I_{CBO} \) tend to increase with temperature due to the increased energy that facilitates more charge carriers overcoming the barrier potential. At room temperature, these leakage currents are typically small but can become significant at higher temperatures. **Typical Values**: - At room temperature: \( I_{CEO} \) and \( I_{CBO} \) generally take very low values (nA range). - At maximum temperature: These values can increase significantly, often by a factor of 10 or more, depending on the specific materials and construction of the transistor. Understanding these leakage currents is important for predicting the behavior of transistors in different thermal environments.
Transcribed Image Text:**Question**: What is \( I_{CEO} \) and how is it related to \( I_{CBO} \)? How do these two parameters change with temperature? Give typical values for each at room temperature and at maximum temperature. **Explanation**: - \( I_{CEO} \) refers to the collector-emitter leakage current when the base is open. - \( I_{CBO} \) refers to the collector-base leakage current when the emitter is open. These currents are related through the transistor configuration and characteristics, particularly in terms of how leakage currents manifest in different configurations. Both \( I_{CEO} \) and \( I_{CBO} \) tend to increase with temperature due to the increased energy that facilitates more charge carriers overcoming the barrier potential. At room temperature, these leakage currents are typically small but can become significant at higher temperatures. **Typical Values**: - At room temperature: \( I_{CEO} \) and \( I_{CBO} \) generally take very low values (nA range). - At maximum temperature: These values can increase significantly, often by a factor of 10 or more, depending on the specific materials and construction of the transistor. Understanding these leakage currents is important for predicting the behavior of transistors in different thermal environments.
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