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Question 2 (a) Find the resistivity of intrinsic silicon at room temperature and classify it as an insulator, semiconductor or conductor with the aid of Table 1. Given the conductivity os q(nn + PH,), the room temperature mobilities for intrinsic silicon are un = 1350 cm²/ Vs and H, = 480 cm²/Vs, the intrinsic carrier concentration is 1.5 x 10:0 /cm² and electric charge q = 1.6 x 10-1º C. Table 1 Electrical Classification of Solid Materials MATERIALS RESISTIVITY (2- cm) Insulatons Semiconductos Conductors 10

Question 2 (a) Find the resistivity of intrinsic silicon at room temperature and classify it as an insulator, semiconductor or conductor with the aid of Table 1. Given the conductivity os q(nn + PH,), the room temperature mobilities for intrinsic silicon are un = 1350 cm²/ Vs and H, = 480 cm²/Vs, the intrinsic carrier concentration is 1.5 x 10:0 /cm² and electric charge q = 1.6 x 10-1º C. Table 1 Electrical Classification of Solid Materials MATERIALS RESISTIVITY (2- cm) Insulatons Semiconductos Conductors 10

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Question 2 (a) Find the resistivity of intrinsic silicon at room temperature and classify it as an insulator, semiconductor or conductor with the aid of Table 1. Given the conductivity a = q(nHn + PHp), the room temperature mobilities for intrinsic silicon are H, = 1350 cm2/ Vs and H, = 480 cm2/Vs, the intrinsic carrier concentration is 1.5 x 1010 /cm and electric charge q = 1.6 x 10-19 C. Table 1 Electrical Classification of Solid Materials MATERIALS RESISTIVITY (2- cm) Insulators Semiconductors Conductors 10 <p 10<p< 10 p< 10 (b) A pure silicon sample maintained at room temperature has an intrinsic carrier concentration of 1.5 x 1010 /cm3. It is first doped with donors of concentration 2 x 1014 /cm3, followed by acceptors of concentration 4 x 1014 /cm2. Assuming that the charge neutrality with complete ionization of Na + po = no + Na and given the conductivity o = q(nun + pHp). i Determine the majority and minority carrier concentrations. ii. Determine the resistivity of the pure sample prior to the two types of doping. iii. Determine the resistivity change after the doping. Figure 1 shows the dependence of electron and hole mobility on total impurity concentration in silicon at room temperature. 1400 Elen 1200 e 1000 400 200 10 10 10 Toal impurity ctration Nin mm SA YC H kapa
Transcribed Image Text:Question 2 (a) Find the resistivity of intrinsic silicon at room temperature and classify it as an insulator, semiconductor or conductor with the aid of Table 1. Given the conductivity a = q(nHn + PHp), the room temperature mobilities for intrinsic silicon are H, = 1350 cm2/ Vs and H, = 480 cm2/Vs, the intrinsic carrier concentration is 1.5 x 1010 /cm and electric charge q = 1.6 x 10-19 C. Table 1 Electrical Classification of Solid Materials MATERIALS RESISTIVITY (2- cm) Insulators Semiconductors Conductors 10 <p 10<p< 10 p< 10 (b) A pure silicon sample maintained at room temperature has an intrinsic carrier concentration of 1.5 x 1010 /cm3. It is first doped with donors of concentration 2 x 1014 /cm3, followed by acceptors of concentration 4 x 1014 /cm2. Assuming that the charge neutrality with complete ionization of Na + po = no + Na and given the conductivity o = q(nun + pHp). i Determine the majority and minority carrier concentrations. ii. Determine the resistivity of the pure sample prior to the two types of doping. iii. Determine the resistivity change after the doping. Figure 1 shows the dependence of electron and hole mobility on total impurity concentration in silicon at room temperature. 1400 Elen 1200 e 1000 400 200 10 10 10 Toal impurity ctration Nin mm SA YC H kapa
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