Question 1 (a) Consider a Si sample doped with 1016 P atoms/cm³ at 300 K. The intrinsie carrier concentration is 1.5 x 1010 /cm³. i. Calculate the thermal equilibrium minority concentration. ii. Calculate the position of the Fermi level relative to the intrinsic Fermi Level. (b) A drift current density of 75 A/cm² is required in a device using p-type silicon when an electric field of 120 V/em is applied. Calculate the required impurity doping concentration to achieve this specification. (c) In an n-type GaAs semiconductor at T 300 K, the electron concentration varies linearly from 7 x 1017 /cm³ to 1 × 1018 /cm³ over a distance of 0.10 cm. Calculate the electron diffusion current density given that the electron diffusion coefficient Dn is 225 cm³/s.

Question 1 (a) Consider a Si sample doped with 1016 P atoms/cm³ at 300 K. The intrinsie carrier concentration is 1.5 x 1010 /cm³. i. Calculate the thermal equilibrium minority concentration. ii. Calculate the position of the Fermi level relative to the intrinsic Fermi Level. (b) A drift current density of 75 A/cm² is required in a device using p-type silicon when an electric field of 120 V/em is applied. Calculate the required impurity doping concentration to achieve this specification. (c) In an n-type GaAs semiconductor at T 300 K, the electron concentration varies linearly from 7 x 1017 /cm³ to 1 × 1018 /cm³ over a distance of 0.10 cm. Calculate the electron diffusion current density given that the electron diffusion coefficient Dn is 225 cm³/s.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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