Question 1 (a) Consider a Si sample doped with 1016 P atoms/cm³ at 300 K. The intrinsie carrier concentration is 1.5 x 1010 /cm³. i. Calculate the thermal equilibrium minority concentration. ii. Calculate the position of the Fermi level relative to the intrinsic Fermi Level. (b) A drift current density of 75 A/cm² is required in a device using p-type silicon when an electric field of 120 V/em is applied. Calculate the required impurity doping concentration to achieve this specification. (c) In an n-type GaAs semiconductor at T 300 K, the electron concentration varies linearly from 7 x 1017 /cm³ to 1 × 1018 /cm³ over a distance of 0.10 cm. Calculate the electron diffusion current density given that the electron diffusion coefficient Dn is 225 cm³/s.

Q: Consider the energy gap of a silicon-based semiconductor at 0°K to be 1.21 eV and the material…

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Q: A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per…

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Q: A 2.5-cm long silicon sample has electron and hole densities as 1015/cm³ and 104/cm³, respectively.…

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Q: . A pn junction is made from p-type silicon doped (1017 cm-3), and n-type silicon (1015 cm-).…

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Q: 2. A silicon specimen is doped with 4.73 x1010/cm³ Antimony and 3.57x1010/cm³ Aluminum. a) Calculate…

A: We need to find out electron and hole concentration of given semiconductor .

Q: 2. A Silicon sample is doped with 2.5x10" acceptor atoms/cm'. Determine the electrons and holes…

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Q: Draw and label separate energy-band diagrams representing n-type silicon, p-type silicon at room…

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Q: ii. Acceptor type impurities will be added to this doped semiconductor material. For the following…

A: σo=nqMn+pqMpGiven,Mn=Mpni=n=1012atmos/cm3ND=p=1013×5atmos/cm3…

Q: 2. An N-type silicon sample has an arsenic dopant density of 10¹7 cm³³. Determine: a) The…

A: Given: n-type semiconductor with Nd=1017 cm-3.

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A: Given :  KT = 26 mev    NV = 1× 10^19 /cm^3.    NA = 4× 10^17 / cm^3     Efp- EV = position of Fermi…

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A: Intrinsic carrier concentration depends on the temperature. As temperature will increase covalent…

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A: Answer is GaAs>Si>Ge

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A: ANSWER (i) Because, Their conductivity can be controlled by the addition…

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A: given reverse saturation currentIS of the diode at 27°C is known to be 3 pA.we have to find the…

Q: ) The figure below shows the electron and hole concentration in a silicon region. The electron and…

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Photoelectric

The photoelectric effect occurs when light (or similar incident radiation, including X-rays) falls on material together with a metal plate and causes it to emit electrons. The discovery of the photoelectric effect led to important new theories (and to a Nobel Prize for Albert Einstein). Photoelectric cells, or photocells, are utilized in burglar-alarm light detectors and garage-door openers (each employs a through-beam of light this is broken when something movements throughout it), and also to play soundtracks on film movies (in which a light beam shines through the soundtrack encoded at the film and is "read" with the aid of the photocells).