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1.1
Calculate the angle between [111] and [111] directions in a cubic crystal.

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2) In one of the most recent silicon industry achievements of 2021, a single transistor takes up a rectangular area on a microchip that measures 10[nm] by 2O[nm]. The early microchips in the 1970's had rectangular transistors that each measured approximátely 20[um] by 40[µm]. How manv of the new 2021 transistors could fit inside the same area of a single 1970 transistor? A) 400 B) 4000 C) 40,000 D) 400,000 É 4,000,000
Problem # 3 (a) Describe the forces responsible for formation of inert gas (such as Argon) crystals. Express the cohesive energy (U(R)) of such crystals as a function of interatomic distance R, and sketch U(R) vs R. (b) Evaluate the Madelung constant for a one-dimensional lattice of Na* and Cl ions. The distance between two nearest neighbor Na* and Cl ions is R. (c) For H2 one finds from measurements on the gas that the Lennard – Jones parameters are ɛ = 40 x 10-16 erg and o = 2.91 Ả. Find the cohesive energy in kJ per mole of H2. Assume that the H2 molecules for an fcc lattice. Treat each H2 molecule as a sphere.
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4.4 Sketch the forward characteristics of a germanium and silicon p-n junction diode and describe the shapes of the characteristics.