Answered: Question 3. L- ] What is the impact of… | bartleby

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Question 3.
L-
] What is the impact of temperature on the probability of finding the electron
in the conduction band.
b) [.
What is the fermi energy level? How can we change it?
a)

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3 The Fermi-Dirac distribution provides the fraction of electrons that can be found for a given electron energy and temperature of the material. Silicon is a widely use semiconductor for computer processors and GPUs, with a band gap of 1.11 eV at room temperature (293 K). a) What is the Fermi energy of Silicon at room temperature? b) Calculate the electron concentration (total number of electrons) at 0.6 eV above the fermi level (in the conduction band) of one mol of silicon (each silicon atom contributes 4 electrons).
Q2 part c
1. In semiconductors, how is conductivityaffected by impurities (doping) and temperature?2. Phosphorous is added to high purity silicon to produce a1023 ?3 charges carrier concentration at room temperature. What is this type of material, n or p?3. Calculate the conductivity of this material at room temperature, assuming that the mobilities of electrons andof the gaps are the same as for the intrinsic material?e = 0.14 and ?h = 0.048 ?/ V s.? = 2240(Ω − ?)-1. P why?
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