4.4 Sketch the forward characteristics of a germanium and silicon p-n junction diode and describe the shapes of the characteristics.

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determine the doubling temperature for list of semiconductor material shown in the table below. Assume the starting temperature for all semiconductors is at 273 K. Table of Semiconductors Material Band-gap energy (eV) Silicon 1.11 Diamond 5.5 Lead(II)-sulfide 0.37 Gallium-nitride 3.4 Silicon-dioxide 9.0 http://hyperphysics.phy-astr.gsu.edu/hbase/Tables/Semgap.html

True or false? If false, correct the statement: a. In an p+-n- junction diode (NA >> ND), nearly all depletion is in the n-type region, and the peak electric field at the junction is almost independent of NA. b. The forward current of a p-n junction diode is dominated by the diffusion and recombination of majority carriers. c. In a Schottky barrier diode, there are two types of capacitances, i.e., the depletion capacitance and diffusion capacitance. d. In a Schottky contact, the energy barrier seen by electrons in the metal is always the Schottky barrier height, regardless of the applied bias across the metal and semiconductor. e. Usually the reverse current of a p-n junction diode is more sensitive to temperature as compared to that of a Schottky barrier diode. f. In a MOS structure with p-type semiconductor, if the semiconductor work function is much smaller than the metal work function, the MOS structure will produce an inversion layer after reaching the thermal equilibrium.…