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Q1. (a) Design a stick (layout) diagram for the following static CMOS logic gate, where A, B, C, D are the logic gate inputs and O/P is the output: VDD D-d[Q8 A-Q5 B-Q6 C-d [Q7 O/P CQ3 DQ4 B-Q2 AQ1 Vss Figure 1 Use dual-well, CMOS technology. Include wells, well-taps, contact cuts, routing of power and GND in your diagram. Use colour coding and/or clear and readable detailed annotations to represent the wires in the different layers. (b) The logic gate from (a) needs to drive a capacitive load of 150 fF with a rise-time and fall-time of 1.2 ns. If the length of all transistors is 0.5 μm, calculate the required widths for all P-type and all N-type MOSFETs in the logic gate to achieve the required edge-speeds. Clearly show the calculation steps of your solution. Assume VDD = 5 V, K'n = 50 μA/V², K'p = 20 μA/V²

Q1. (a) Design a stick (layout) diagram for the following static CMOS logic gate, where A, B, C, D are the logic gate inputs and O/P is the output: VDD D-d[Q8 A-Q5 B-Q6 C-d [Q7 O/P CQ3 DQ4 B-Q2 AQ1 Vss Figure 1 Use dual-well, CMOS technology. Include wells, well-taps, contact cuts, routing of power and GND in your diagram. Use colour coding and/or clear and readable detailed annotations to represent the wires in the different layers. (b) The logic gate from (a) needs to drive a capacitive load of 150 fF with a rise-time and fall-time of 1.2 ns. If the length of all transistors is 0.5 μm, calculate the required widths for all P-type and all N-type MOSFETs in the logic gate to achieve the required edge-speeds. Clearly show the calculation steps of your solution. Assume VDD = 5 V, K'n = 50 μA/V², K'p = 20 μA/V²

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q1. (a) Design a stick (layout) diagram for the following static CMOS logic gate, where A, B, C, D are the logic gate inputs and O/P is the output: VDD D-d[Q8 A-Q5 B-Q6 C-d [Q7 O/P CQ3 DQ4 B-Q2 AQ1 Vss Figure 1 Use dual-well, CMOS technology. Include wells, well-taps, contact cuts, routing of power and GND in your diagram. Use colour coding and/or clear and readable detailed annotations to represent the wires in the different layers. (b) The logic gate from (a) needs to drive a capacitive load of 150 fF with a rise-time and fall-time of 1.2 ns. If the length of all transistors is 0.5 μm, calculate the required widths for all P-type and all N-type MOSFETs in the logic gate to achieve the required edge-speeds. Clearly show the calculation steps of your solution. Assume VDD = 5 V, K'n = 50 μA/V², K'p = 20 μA/V²
Transcribed Image Text:Q1. (a) Design a stick (layout) diagram for the following static CMOS logic gate, where A, B, C, D are the logic gate inputs and O/P is the output: VDD D-d[Q8 A-Q5 B-Q6 C-d [Q7 O/P CQ3 DQ4 B-Q2 AQ1 Vss Figure 1 Use dual-well, CMOS technology. Include wells, well-taps, contact cuts, routing of power and GND in your diagram. Use colour coding and/or clear and readable detailed annotations to represent the wires in the different layers. (b) The logic gate from (a) needs to drive a capacitive load of 150 fF with a rise-time and fall-time of 1.2 ns. If the length of all transistors is 0.5 μm, calculate the required widths for all P-type and all N-type MOSFETs in the logic gate to achieve the required edge-speeds. Clearly show the calculation steps of your solution. Assume VDD = 5 V, K'n = 50 μA/V², K'p = 20 μA/V²
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