-n d uctor h band gap of 2.8 eV. Can it detect a wavelength of 20 nm?

University Physics Volume 3
17th Edition
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:William Moebs, Jeff Sanny
Chapter9: Condensed Matter Physics
Section: Chapter Questions
Problem 73P: The Hall effect is demonstrated in the laboratory. A thin rectangular strip of semiconductor with...
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11. A p-n photodiode is fabricated from a semiconductor
of 2.8 eV. Can it detect a wavelength of
with band gap
6000 nm?
AHLIESTER, TEL QU had Vest
Transcribed Image Text:11. A p-n photodiode is fabricated from a semiconductor of 2.8 eV. Can it detect a wavelength of with band gap 6000 nm? AHLIESTER, TEL QU had Vest
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