A simple Ge n-i-n photo-detector sample has a length of L= 30 um and a hole lifetime of Tp 0.4 us. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 O c.0 d. 680.0 e. 0.3552
A simple Ge n-i-n photo-detector sample has a length of L= 30 um and a hole lifetime of Tp 0.4 us. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 O c.0 d. 680.0 e. 0.3552
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Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
h
6.63 x 10-34 J.s
Si
Ge
m.
9.11 x 10-31 Kg
Eg (eV)
п, (ст-3)
Hn (cm²/V – s)
Hp (cm²/V – s)
Ne (cm-3)
Ny (cm-3)
m/m.
m, /m.
E, (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
1500
3900
8500
Eo
8.85 x 10-12 F/m
450
1900
400
1.05 x 10-34 J – s
2.78 x 1019
1.04 x 1019 4.45 x 1017
K
8.6 x 10-5 eV|K
9.84 x 1018
6 x 1018
7.72 x 1018
KT/q
26 mV (T = 300 K)
0.082
0.98
0.067
26 meV (T = 300 K)
3 x 108 m/s
KT
0.28
0.49
0.45
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
E9ALGA1- As (x) = 1.424 + 1.247x
EgIn.Ga1-rAs (x) = 0.36 + 1.064x
1 eV = 1.602 × 10¬19 J
1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:A simple Ge n-i-n photo-detector sample has a length of L=30 um and a hole lifetime of
Tp=0.4 us. If a voltage of 2V is applied across the detector length, at 300 K the detector
gain at the applied voltage will be:
O a. 515.5
O b. 1056
O c.0
d. 680.0
e. 0.3552
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