In "Orthogonal Design for Process Optimization and Its Application to Plasma Etching" (Solid State Technology, May 1987), G. Z. Yin and D. W. Jillie describe an experiment to determine the effect of C2F flow rate on the uniformity of the etch ona silicon wafer used in integrated circuit manufacturing. Three flow rates are used in the experiment, and the resulting uniformity (in percent) for six replicates is shown below. Observations C2F, Flow (SCCM) 2 3 4 5 6. 125 2.5 4.4 2.6 3.2 3.2 4.0 160 4.8 4.4 4.8 4.2 3.6 4.2 200 4.6 3.3 2.8 3.4 4.2 5.3 (a) Does C,F, flow rate affect etch uniformity? Construct box plots to compare the factor levels and perform the analysis of variance. Use a = 0.05. There is that flow rate affects etch uniformity. (b) Do the residuals indicate any problems with the underlying assumptions?

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Vng exer Cise.
In "Orthogonal Design for Process Optimization and Its Application to Plasma Etching" (Solid State Technology, May 1987), G. Z. Yin and
D. W. Jillie describe an experiment to determine the effect of CF, flow rate on the uniformity of the etch on a silicon wafer used in
integrated circuit manufacturing. Three flow rates are used in the experiment, and the resulting uniformity (in percent) for six
replicates is shown below.
Observations
CF Flow
(SCCM)
1
2
3
4
125
2.5 4.4 2.6 3.2 3.2 4.0
160
4.8
4.4 4.8 4.2 3.6 4.2
200
4.6 3.3 2.8 3.4 4.2 5.3
(a) Does C,F flow rate affect etch uniformity? Construct box plots to compare the factor levels and perform the analysis of variance.
Use a = 0.05.
There is
that flow rate affects etch uniformity.
(b) Do the evidence
e any problems with the underlying assumptions?
no evidence
Transcribed Image Text:Vng exer Cise. In "Orthogonal Design for Process Optimization and Its Application to Plasma Etching" (Solid State Technology, May 1987), G. Z. Yin and D. W. Jillie describe an experiment to determine the effect of CF, flow rate on the uniformity of the etch on a silicon wafer used in integrated circuit manufacturing. Three flow rates are used in the experiment, and the resulting uniformity (in percent) for six replicates is shown below. Observations CF Flow (SCCM) 1 2 3 4 125 2.5 4.4 2.6 3.2 3.2 4.0 160 4.8 4.4 4.8 4.2 3.6 4.2 200 4.6 3.3 2.8 3.4 4.2 5.3 (a) Does C,F flow rate affect etch uniformity? Construct box plots to compare the factor levels and perform the analysis of variance. Use a = 0.05. There is that flow rate affects etch uniformity. (b) Do the evidence e any problems with the underlying assumptions? no evidence
In "Orthogonal Design for Process Optimization and Its Application to Plasma Etching" (Solid State Technology, May 1987), G. Z. Yin and
D. W. Jillie describe an experiment to determine the effect of C2Fe flow rate on the uniformity of the etch on a silicon wafer used in
integrated circuit manufacturing. Three flow rates are used in the experiment, and the resulting uniformity (in percent) for six
replicates is shown below.
Observations
C„F. Flow
(SCCM)
2
3
4
5
125
2.5 4.4 2.6 3.2 3.2 4.0
160
4.8 4.4 4.8 4.2 3.6 4.2
200
4.6 3.3 2.8 3.4 4.2 5.3
(a) Does C,F, flow rate affect etch uniformity? Construct box plots to compare the factor levels and perform the analysis of variance.
Use a = 0.05.
There is
that flow rate affects etch uniformity.
(b) Do the residuals indicate any problems with the underlying assumptions?
No.
Statistical Tables and Charts
Yes.
Transcribed Image Text:In "Orthogonal Design for Process Optimization and Its Application to Plasma Etching" (Solid State Technology, May 1987), G. Z. Yin and D. W. Jillie describe an experiment to determine the effect of C2Fe flow rate on the uniformity of the etch on a silicon wafer used in integrated circuit manufacturing. Three flow rates are used in the experiment, and the resulting uniformity (in percent) for six replicates is shown below. Observations C„F. Flow (SCCM) 2 3 4 5 125 2.5 4.4 2.6 3.2 3.2 4.0 160 4.8 4.4 4.8 4.2 3.6 4.2 200 4.6 3.3 2.8 3.4 4.2 5.3 (a) Does C,F, flow rate affect etch uniformity? Construct box plots to compare the factor levels and perform the analysis of variance. Use a = 0.05. There is that flow rate affects etch uniformity. (b) Do the residuals indicate any problems with the underlying assumptions? No. Statistical Tables and Charts Yes.
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