Answered: If we decrease the substrate doping… | bartleby

Related questions

Question

100%

If we decrease the substrate doping concentration. how will the following parameter.;

Expert Solution

Trending now

This is a popular solution!

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Blurred answer

Similar questions

Urgent solution required
2. For a silicon one sided abrupt p/n junction has NA = 1x10¹⁹ cm³ and NB =No=3x10¹5 cm³. Critical field at breakdown is 3 x 105 V/cm. Maximum depletion width (Wm) is defined as the depletion width at avalanche breakdown. Ignore Vbi. (a) Calculate avalanche breakdown voltage and Wm. (b) Calculate the breakdown voltage called punch through voltage if device width (W) is reduced to 3.3 μm. (c) Find the stored minority carriers per unit area in the neutral n-region for a forward bias of 0.5V. Diffusion length of holes is 1 μm.
Phosphorous was added to high purity silicon to produce a 10 ? charge carrier concentration at room temperature. Calculate the conductivity of this material at room temperature, assuming that the mobility of electrons and hollows is the same as for intrinsic material. ?e =0.14 y ?h=0.048 ?-3/V s. ? = 2240(Ω − ?)-1