I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature.Calculate the electric conductivity (o) that produced from the minority carriers, givenn; = 2.5 x 1013 /m³, He = 38 m2 /Vs, Hp 18 m2/VsII. Find electron and hole concentration for Si sample at 300k when its doping with 1016Gallium atom / m3 which make Eg= 0.935 ev. Given N. = N, = 2.8 x 1025states/m3.

In p-type semiconductor materials the electrons are the minority carriers. Resistivity =0.3 ohm…

I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature. Calculate the electric conductivity (o) that produced from the minority carriers, given n; = 2.5 x 1013 /m³, He = 38 m2/Vs, Hp 18 m²/Vs II. Find electron and hole concentration for Si sample at 300k when its doping with 1016 Gallium atom/m3 which make E, = 0.935 ev. Given N. = N, = 2.8 x 1025 %3D %3D states/m3.

I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature. Calculate the electric conductivity (o) that produced from the minority carriers, given n; = 2.5 x 1013 /m³, He = 38 m2/Vs, Hp 18 m²/Vs II. Find electron and hole concentration for Si sample at 300k when its doping with 1016 Gallium atom/m3 which make E, = 0.935 ev. Given N. = N, = 2.8 x 1025 %3D %3D states/m3.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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