A student performs an experiment in laboratory (T=300 K) and his/her purpose is to change p-type Ge semiconductor into n-type with Fermi energy level of 0.1eV below the conduction band. In order to accomplish this experiment, he/she adds 3.4x107 cm³ donor concentrations. Therefore, how much acceptor impurity concentrations had been initially before student applied the experiment. Lütfen birini seçin: a. 1.51 5x1017 cm b. 1.215x10" cm C. 1.015x10" cm d. 1.415x107 cm e. 1.715x107 cm f. 1.615x1017 cm g. 1.315x1017 cm h. 1.115x10" cm

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A student performs an experiment in laboratory (T=300 K) and his/her purpose
is to change p-type Ge semiconductor into ntype with Fermi energy level of
0. 1eV below the conduction band. In order to accomplish this experiment,
he/she adds 3.4x1017 cm3 donor concentrations. Therefore, how much
acceptor impurity concentrations had been initially before student applied the
experiment.
Lütfen birini seçin:
a. 1.515x107 cm
b. 1.215x107 cm
c. 1.015x107 cm
d. 1.415x1017 cm
e. 1.715x107 cm3
f. 1.615x1017 cma
g. 1.315x1017 cm
h. 1.115x107 cm
Transcribed Image Text:A student performs an experiment in laboratory (T=300 K) and his/her purpose is to change p-type Ge semiconductor into ntype with Fermi energy level of 0. 1eV below the conduction band. In order to accomplish this experiment, he/she adds 3.4x1017 cm3 donor concentrations. Therefore, how much acceptor impurity concentrations had been initially before student applied the experiment. Lütfen birini seçin: a. 1.515x107 cm b. 1.215x107 cm c. 1.015x107 cm d. 1.415x1017 cm e. 1.715x107 cm3 f. 1.615x1017 cma g. 1.315x1017 cm h. 1.115x107 cm
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