For a particular n-channel MOS technology, in which the minimum channel length is 0.2 μm, the associated value of λ is 0.5 V-1. If a particular device for which L is 1.0 μm operates in saturation at vDS = 1 V with a drain current of 100 μA, what does the drain current become if vDS is raised to 2 V? What percentage change does this represent? What can be done to reduce the percentage by a factor of 2?
For a particular n-channel MOS technology, in which the minimum channel length is 0.2 μm, the associated value of λ is 0.5 V-1. If a particular device for which L is 1.0 μm operates in saturation at vDS = 1 V with a drain current of 100 μA, what does the drain current become if vDS is raised to 2 V? What percentage change does this represent? What can be done to reduce the percentage by a factor of 2?
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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For a particular n-channel MOS technology, in which the minimum channel length is 0.2 μm, the associated value of λ is 0.5 V-1. If a particular device for which L is 1.0 μm operates in saturation at vDS = 1 V with a drain current of 100 μA, what does the drain current become if vDS is raised to 2 V? What percentage change does this represent? What can be done to reduce the percentage by a factor of 2?
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