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A silicon (Si) npn bipolar transistor is doped with impurity concentrations of 10" cm", 10" cm³, and 10“ cm in the emitter, base and collector, respectively. The lengths of the emitter and collector length are 1 um and the base width is 500 nm. The device is operating at room temperature.

A silicon (Si) npn bipolar transistor is doped with impurity concentrations of 10" cm", 10" cm³, and 10“ cm in the emitter, base and collector, respectively. The lengths of the emitter and collector length are 1 um and the base width is 500 nm. The device is operating at room temperature.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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A silicon (Si) npn bipolar transistor is doped with impurity concentrations of 10 cm, 10" cm³, and 10€ cm³ in the emitter, base and collector, respectively. The lengths of the emitter and collector length are 1 um and the base width is 500 nm. The device is operating at room temperature. (1) Copy and complete the table below. Assume that the intrinsic carrier concentration for silicon is 100 cm Electron concentration (cm) Hole concentration (cm) Emitter Base Collector (2) Determine the diffusion constant for the minority carriers in the emitter region of the transistor.
Transcribed Image Text:A silicon (Si) npn bipolar transistor is doped with impurity concentrations of 10 cm, 10" cm³, and 10€ cm³ in the emitter, base and collector, respectively. The lengths of the emitter and collector length are 1 um and the base width is 500 nm. The device is operating at room temperature. (1) Copy and complete the table below. Assume that the intrinsic carrier concentration for silicon is 100 cm Electron concentration (cm) Hole concentration (cm) Emitter Base Collector (2) Determine the diffusion constant for the minority carriers in the emitter region of the transistor.
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