Determine the diffusion current density of the minority carriers in units of (Amps/cm2) in a semiconductor. Assume complete ionization and the parameters given below: • Semiconductor: Silicon ND= 3 × 1016 (cm-³) • NA = 1 × 1013 (cm-³) • Hole carrier concentration: p(x) = 3.1010 + 41.109.e(-x/0.00206) (cm-3) • At Position: x = 8.10-4 (cm)
Determine the diffusion current density of the minority carriers in units of (Amps/cm2) in a semiconductor. Assume complete ionization and the parameters given below: • Semiconductor: Silicon ND= 3 × 1016 (cm-³) • NA = 1 × 1013 (cm-³) • Hole carrier concentration: p(x) = 3.1010 + 41.109.e(-x/0.00206) (cm-3) • At Position: x = 8.10-4 (cm)
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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![Determine the diffusion current density of the minority carriers in units of (Amps/cm²) in a semiconductor. Assume complete
ionization and the parameters given below:
●
Semiconductor: Silicon
ND = 3 × 1016 (cm-³)
NA = 1 × 1013 (cm-³)
Hole carrier concentration: p(x) = 3•1010 + 41.109.e(-x/0.00206)
At Position: x = 8.10-4 (cm)
●
(cm-3)](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fd9febe5d-8b15-43b8-b1a2-ee1d05ea5a44%2Fe0b84470-c082-4e95-a030-ae0730b60478%2F824p21q_processed.png&w=3840&q=75)
Transcribed Image Text:Determine the diffusion current density of the minority carriers in units of (Amps/cm²) in a semiconductor. Assume complete
ionization and the parameters given below:
●
Semiconductor: Silicon
ND = 3 × 1016 (cm-³)
NA = 1 × 1013 (cm-³)
Hole carrier concentration: p(x) = 3•1010 + 41.109.e(-x/0.00206)
At Position: x = 8.10-4 (cm)
●
(cm-3)
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