Describe THREE (3) factors affecting threshold frequencies in materials (e.g. pure/composite materials
Q: Draw a circuit of (i) (ii) diode forward biased and diode reversed biased.
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Q: Two identical Schottky diodes are connected in series, one in the forward and the other in reverse…
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Q: M [Al3+] = 0.2 in the middle of the solution at 298 K, 8 = 0.5 mm, D(AI3+) = 5x10-8cm2/s Whate the…
A: Here is the explaination for the given question To calculate the limited current intensity for…
Q: 27. A Si sample is doped with x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers…
A: Solution: a). The density of electrons and holes are given by the following relation,…
Q: In a p-type semiconductor with a defect-rich surface the surface recombination velocity is 104 cm/s.…
A: Given that In a p-type semiconductor with a defect-rich surface the surface recombination velocity…
Q: 3. Given the vector current density J=-10r z sin o + 4rz î mA/m?: (b) determine the total current…
A: part (b) Given current density J=-10r2zsin φ r^+4rzz^…
Q: A Langmuir probe of area 3.2 x 10-5 m2 measures an ion saturation current of 0.042 mA in an argon…
A: GIven: The area of the Langmuir probe is 3.2×10-5 m2. The ion saturation current is 0.042 mA. The…
Q: A pn GaAs LED material has mean lifetime. of radiative and non-radiative recombinations as loo 100…
A: Given: Here are the given data, Mean life for radiative LED, τr=100 ns Mean life for non-radiative…
Q: The maximum wavelength of light that a certain silicon photocell can detect is 1.11 mm. (a) What is…
A: The expression for the energy difference between the top valance band and bottom of conduction band…
Q: If one of the dimensions of an unknown nanostructure is 2.0 nm and dielectric constant (ɛ,) is 10,…
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Q: Will quantitative fluorescence spectroscopy be as sensitive to path length differences in sample…
A: Fluorescence is a type of luminescence caused by photons exciting a molecule, raising it to an…
Q: When a forward bias is applied to a p-n junction, it(a) raises the potential barrier.(b) reduces the…
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Q: (a) What is the minimum donor doping required to convert silicon into a conductor based on the…
A: Known quantities: charge of an electron = e resistivity (rho) <10-3 ohm .cm Now, the…
Q: An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X -3 -3 1017 cm-³ and…
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Q: (a) Show that the resistivity of intrinsic germanium at 300 °K is 0.45 Q.m if -3 = 2.5×10¹9 m3, n =…
A: The relation of conductivity must e known. Resistivity is reciprocal of it.
Q: A sample of a semiconductor (A) is measured at room temperature The Hall coefficient of (A) is 4 x…
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Q: Calculate the input bias current at each input of an op-amp having specified values of I1o IiB = 20…
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Q: Continuity Equation and Relaxation Time Determine the relaxation time for each of the following…
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Q: An individual white LED (light-emitting diode) has an efficiency of 20% and uses 1.0 W of electric…
A: The efficiency of LED bulb is 20 % and its output power source is 1.6 Watt
Q: Drive the relation berween current gain factor β and ϒ.
A: In the given question we derive the relation between current gain factor beeta and gamma.
Q: Q3] Find the resistivity at 300 K for a Si sample doped with 1.0x104 cm of phosphorous atoms, 8.5x…
A: Formula:ρ=1niqμn+μpohm·cmwhere, ρ is the resistivityni=9.65×109cm-3q=1.6×10-19Cμn=1500 cm2/V·sμp=500…
Q: A sample of silicon is uniformly doped with (10^16) arsenic atoms per cm-3 and 5x(10^15) boron atoms…
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Q: Calculate the threshold frequency of Calcium with 4.3x10^-19 J Work Function.
A: The work function is given as E=4.3×10-19 J The threshold frequency f0 is the minimum frequency of…
Q: A diode detector is used to detect an amplitude modulated wave of 60% modulation by using a…
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Q: Concerning the laser effect in tissue, vaporization occurs when the cell temperature reaches to * O…
A: The tissue heat up rapidly because of high absorption and high power of the laser.
Q: B) Determine the internal optical power of the double hetetostructure LED has 85% quantum efficiency…
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Q: Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 10t cm3 and donor…
A: Write the equation for the built-in potential barrier for pn junction as below. Vbi=VT·lnNa·Ndni2…
Q: Assume that at T-300 K, the electron mobility in a silicon sample is 1300 cm²/Vs If an electric…
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Q: In a semiconcuctor sample subjected to the Hall experiment the velocity of the majority carriers was…
A: Given information: The velocity of majority charge carriers, v=2×106 cm/s The resistance of the…
Q: The best multi-junction solar cells have an efficiency of about 40% for converting light energy from…
A: Given information: The efficiency of the Solar Cell (η) = 40% = 0.4 The Power consumed by the US (P)…
Q: An n-type Ge sample is usually used in the Shockey experiment. The length of the sample is 1 cm and…
A: A proportionality relation between the gradient of concentration and the flux is termed as the…
Q: Design a Class AB CMOS Amplifier Input voltage less than 1.5 V. Maximum peak output current of ± 7…
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Q: 2. The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron…
A: electron mobility μe=1300cm2/V-s hole mobility μp=450cm2/V-s concentration n=1015cm-3 conductivity…
Q: Calculate the threshold frequency of Zinc with 6.9x10^-19 J Work Function.
A: Given data: Work function of zinc is, E=6.9×10-19 J.
Q: Q :- Find the mobilities, and resistivities of silicon samples at 300 K, for each of the following…
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Q: (3) In an n-tpye semiconductor for the given linear variation doping concentration of Na (x) = 1016…
A: The solution of the problem as is follows,
Q: at
A: Given: Critical temperature = 7.26 K Critical field = 5 x 105 A/m Temperature = 3 K
Q: If the gate length of a nMOS transistor is 10nm, under a certain value of electric field and the…
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Q: I=1,(1-exp(-a x)
A: In the given equation I=I01-exp-αxα=it is the absorption coefficient of the mediumI0=Initial…
Q: describe how light is produced in a pn junction.
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Q: At low lateral field, between Si and GaAs, which material has higher drift current at a
A: The drift current can be formulated as J=σEJ=drift current densityσ=conductivity of the…
Describe THREE (3) factors affecting threshold frequencies in materials (e.g. pure/composite materials)
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